Abstract: An exemplary power semiconductor clamping stack includes a plurality of power semiconductor components that are arranged in a row along the stacking direction, and a first and second end plate. The row of power semiconductor components is arranged between the first and second end plate and a clamping force is applied to the first and second end plate in order to tension the row of power semiconductor components between the first and second end plate. A clamping force measuring device is arranged between the first end plate and the row of power semiconductor components in order to adjust the clamping force.

Abstract: A circuit arrangement (3) of modular design, in particular for propulsion of a railroad vehicle, having at least two series-connected, power-electronic modules (M1, M2, . . . Mn), which each have a DC isolation point. A first (M1) of these modules is connected to high voltage and a second (M1) is connected to frame or ground potential. The first module (M1) has a first power-electronics assembly (4) which is at high voltage and is connected to a power-electronics assembly (4) (which is at a lower potential) of the second or of a third module (M2). The power-electronics assemblies (4) of each module are arranged in one of several equivalent and dielectric material housings (10), each of which is normally designed in a cuboid shape. The housings (10) are arranged parallel and at a short distance away from one another with regard to their height on a plate (9) which is at frame or ground potential.

Abstract: The module (M.sub.1, M.sub.2, . . ) has a first power-electronics assembly (4) which is at high voltage, a second power-electronics assembly (6) which is at a lower potential, and a transformer (5) which couples the two assemblies (4, 6) forming a DC isolation point. The first assembly (4) and electrical connections (26, 27) of the transformer (5) which are connected to it are arranged in a dielectric material housing (10) which is normally designed in a cuboid shape. The dielectric material housing (10) in each case has an electrically conductive layer, which is connected to frame or ground potential, on its top surface (11) and bottom surface (12) as well as on its front face (13) which is closed at the front. An electrical connection of the first power-electronics assembly (4) is passed through each of the two side surfaces (14, 15) of the module.

Abstract: A power semiconductor module is specified. It comprises a housing into which any desired power semiconductor circuit is installed. The power semiconductor circuit has at least two connections, which are passed out of the housing. According to the invention, the connections have the form of an elongate plug contact. An insulating plate may additionally be provided between the adjacent plug contacts. Reliable, yet easily releasable, low-inductance electrical contact is achieved by this form of the connections.