Abstract: A method for producing a semiconductor-on-insulator structure comprises the steps of: —joining a support substrate with a donor substrate, the support substrate having an electrical resistivity greater than or equal to 500 ?·cm and containing interstitial nitrogen and interstitial oxygen, the initial concentration of interstitial oxygen in the support substrate being between 15 and 25 old ppma, the donor substrate including a semiconductor layer, an electrically insulating layer being at the interface between the support substrate and the donor substrate; and—transferring the semiconductor layer onto the support substrate, the method further comprising a nucleation step comprising a heat treatment in order to precipitate part of the oxygen and nitrogen so as to form nuclei of oxygen and nitrogen precipitates, and a stabilization step comprising a heat treatment in order to grow the nuclei to a size of between 10 and 50 nm.

Abstract: A carrier substrate comprises monocrystalline silicon, and has a front face and a back face. The carrier substrate comprises: a surface region extending from the front face to a depth of between 800 nm and 2 microns, having less than 10 crystal-originated particles (COPs) (as detected by inspecting the surface using dark-field reflection microscopy); an upper region extending from the front face to a depth of between a few microns and 40 microns and having an interstitial oxygen (Oi) content less than or equal to 7.5E17 Oi/cm3 and a resistivity higher than 500 ohm·cm, and a lower region extending between the upper region and the back face and having a micro-defect (BMD) concentration greater than or equal to 1E8/cm3. A method is used to manufacture such a carrier substrate.