Abstract: A heat-sensitive resistor with a negative or positive temperature coefficient comprises respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100° C.

Abstract: An electronic device having at least a first portion including a metal oxide that is in contact with a second portion including the said metal oxide, the first portion being semiconducting and the second portion being electrically insulating.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: An electronic device having at least a first portion including a metal oxide that is in contact with a second portion including the said metal oxide, the first portion being semiconducting and the second portion being electrically insulating.

Abstract: An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Abstract: The invention concerns a heat-sensitive resistor with a negative or positive temperature coefficient, comprising respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100° C.

Abstract: A method of manufacturing a microelectronic device including a first component hybridized with a second component via electric interconnects, involves the steps of: (i) forming the first and second components, the second component being transparent to ultraviolet radiation at least in line with locations provided for the interconnects; (ii) forming interconnection elements including copper oxide on the second component at the locations provided for the interconnects; (iii) placing the first and second components on each other; and (iv) applying the ultraviolet radiation through the second component on the elements including copper oxide to implement an ultraviolet anneal converting copper oxide into copper.

Abstract: A method of manufacturing a microelectronic device including a first component hybridized with a second component via electric interconnects, involves the steps of: (i) forming the first and second components, the second component being transparent to ultraviolet radiation at least in line with locations provided for the interconnects; (ii) forming interconnection elements including copper oxide on the second component at the locations provided for the interconnects; (iii) placing the first and second components on each other; and (iv) applying the ultraviolet radiation through the second component on the elements including copper oxide to implement an ultraviolet anneal converting copper oxide into copper.

Abstract: A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor layer such that a maximum distance separating the two electrodes is less than the largest dimension of one of the semiconductor portions. The shape and dimensions of the semiconductor portions, the spacing between the semiconductor portions, the shape and dimensions of the electrodes and the layout of the electrodes relative to the semiconductor portions are such that at least one of the semiconductor portions electrically connects the two electrodes to each other. The largest dimensions of the semiconductor portions are perpendicular to the largest dimension of the electrodes, the electrodes being similar.

Abstract: A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor layer such that a maximum distance separating the two electrodes is less than the largest dimension of one of the semiconductor portions. The shape and dimensions of the semiconductor portions, the spacing between the semiconductor portions, the shape and dimensions of the electrodes and the layout of the electrodes relative to the semiconductor portions are such that at least one of the semiconductor portions electrically connects the two electrodes to each other. The largest dimensions of the semiconductor portions are perpendicular to the largest dimension of the electrodes, the electrodes being similar.

Abstract: A technique to form metallic nanodots in a two-step process involving: (1) reacting a silicon-containing gas precursor (e.g., silane) to form silicon nuclei over a dielectric film layer; and (2) using a metal precursor to form metal nanodots where the metal nanodots use the silicon nuclei from step (1) as nucleation points. Thus, the original silicon nuclei are a core material for a later metallic encapsulation step. Metallic nanodots have applications in devices such as flash memory transistors.

Abstract: A method of forming a nickel monosilicide layer on silicon-containing features of an electronic device that includes depositing a nickel film over the silicon-containing features. The nickel film is co-deposited with a selected material. The selected material has an atomic percentage in a range of about 10% to 25%. A single anneal step is then applied to the nickel film thus directly forming the nickel monosilicide layer.

Abstract: An electronic device and method for forming same. The electronic device includes a source and drain region. Each region has an uppermost portion comprised of a first silicide where the first silicide is overlaid with a first dielectric layer. The electronic device further includes a gate region having an uppermost portion comprised of a second silicide. The second silicide is both thicker than the first silicide and has a lower resistivity than the first silicide with at least a portion of the second silicide being formed in an opening in the first dielectric layer.

Abstract: A technique to form metallic nanodots in a two-step process involving: (1) reacting a silicon-containing gas precursor (e.g., silane) to form silicon nuclei over a dielectric film layer; and (2) using a metal precursor to form metal nanodots where the metal nanodots use the silicon nuclei from step (1) as nucleation points. Thus, the original silicon nuclei are a core material for a later metallic encapsulation step. Metallic nanodots have applications in devices such as flash memory transistors.