Patents by Inventor Romain Esteve

Romain Esteve has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101343
    Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies AG
    Inventors: Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt, Romain Esteve, Michael Hell, Daniel Kueck, Caspar Leendertz, Dethard Peters, Hans-Joachim Schulze
  • Publication number: 20210167203
    Abstract: A method of manufacturing semiconductor devices includes: forming source regions of a first conductivity type in a SiC-based semiconductor substrate, wherein dopants are introduced selectively through first segments of first mask openings in a first dopant mask and wherein a longitudinal axis of the first mask opening extends into a first horizontal direction; forming pinning regions of a complementary second conductivity type, wherein dopants are selectively introduced through second segments of the first mask openings and wherein the first and second segments alternate along the first horizontal direction; and forming body regions of the second conductivity type, wherein dopants are selectively introduced through second mask openings in a second dopant mask, wherein a width of the second mask openings along a second horizontal direction orthogonal to the first horizontal direction is greater than a width of the first mask openings.
    Type: Application
    Filed: February 10, 2021
    Publication date: June 3, 2021
    Inventors: Andreas Peter Meiser, Romain Esteve, Roland Rupp
  • Publication number: 20210118986
    Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.
    Type: Application
    Filed: December 4, 2020
    Publication date: April 22, 2021
    Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
  • Patent number: 10985248
    Abstract: Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and non-linear junctions formed with the SiC material at the bottom of other gate trenches. In other embodiments, the SiC device has the shielding regions at the bottom of the gate trenches and arranged in rows which run in a direction transverse to a lengthwise extension of the trenches. In still other embodiments, the SiC device has the shielding regions and the non-linear junctions, and wherein the shielding regions are arranged in rows which run in a direction transverse to a lengthwise extension of the trenches.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: April 20, 2021
    Assignee: Infineon Technologies AG
    Inventors: Caspar Leendertz, Romain Esteve, Anton Mauder, Andreas Meiser, Bernd Zippelius
  • Patent number: 10964808
    Abstract: A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate structures include a gate electrode and are spaced apart from one another along a first horizontal direction and extend into a body region with a longitudinal axis parallel to the first horizontal direction. First sections of first pn junctions between the body regions and a drift structure are tilted to the first surface and parallel to the first horizontal direction. Source regions form second pn junctions with the body regions. A gate length of the gate electrode along a second horizontal direction orthogonal to the first horizontal direction is greater than a channel length between the first sections of the first pn junctions and the second pn junctions.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: March 30, 2021
    Assignee: Infineon Technologies AG
    Inventors: Andreas Meiser, Romain Esteve, Roland Rupp
  • Patent number: 10915029
    Abstract: A semiconductor device is provided that includes a silicon carbide substrate including a main surface at which a plurality of doped zones are formed in a junction termination extension zone of the silicon carbide substrate, the plurality of doped zones are arranged such that a lateral dopant concentration gradient is formed that decreases from a central region of the silicon carbide substrate to an outer edge region of the silicon carbide substrate.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: February 9, 2021
    Inventors: Roland Rupp, Rudolf Elpelt, Romain Esteve
  • Patent number: 10896952
    Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: January 19, 2021
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
  • Publication number: 20210013310
    Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.
    Type: Application
    Filed: July 11, 2020
    Publication date: January 14, 2021
    Inventors: Caspar Leendertz, Romain Esteve, Moriz Jelinek, Anton Mauder, Hans-Joachim Schulze, Werner Schustereder
  • Publication number: 20200381253
    Abstract: A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 3, 2020
    Inventors: Hans-Joachim SCHULZE, Romain ESTEVE, Moriz JELINEK, Caspar LEENDERTZ, Werner SCHUSTEREDER
  • Patent number: 10734514
    Abstract: A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: August 4, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Romain Esteve, Dethard Peters, Roland Rupp, Ralf Siemieniec
  • Patent number: 10727330
    Abstract: A semiconductor device includes a SiC body having a first surface, a gate trench extending from the first surface into the SiC body and having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, a source region of a first conductivity type formed in the SiC body and adjoining the first sidewall of the gate trench, a drift region of the first conductivity type formed in the SiC body below the source region, a body region of a second conductivity type formed in the SiC body between the source region and the drift region and adjoining the first sidewall of the gate trench, and a diode region of the second conductivity type formed in the SiC body and adjoining the second sidewall and the bottom of the gate trench but not the first sidewall of the gate trench.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: July 28, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ralf Siemieniec, Wolfgang Bergner, Romain Esteve, Dethard Peters
  • Publication number: 20200219972
    Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.
    Type: Application
    Filed: January 3, 2020
    Publication date: July 9, 2020
    Inventors: Caspar LEENDERTZ, Rudolf ELPELT, Romain ESTEVE, Thomas GANNER, Jens Peter KONRATH, Larissa WEHRHAHN-KILIAN
  • Patent number: 10700192
    Abstract: A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes a drift region, a source region, and a body region arranged between the source region and the drift region. A gate trench extends from a first surface of the semiconductor body, through the source and body regions and into the drift region. A diode region extends under the gate trench. A pn junction is formed between the diode and drift regions below the gate trench. A gate electrode arranged in the gate trench is dielectrically insulated from the source, body, diode and drift regions by a gate dielectric. A contact trench spaced apart from the gate trench extends from the first surface into the source region. A source electrode arranged in the contact trench adjoins the source region at a sidewall of the contact trench.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ralf Siemieniec, Wolfgang Bergner, Romain Esteve, Dethard Peters
  • Patent number: 10700182
    Abstract: By using at least one of a processor device and model transistor cells, a set of design parameters for at least one of a transistor cell and a drift structure of a wide band-gap semiconductor device is determined, wherein an on state failure-in-time rate and an off state failure-in-time rate of a gate dielectric of the transistor cell are within a same order of magnitude for a predefined on-state gate-to-source voltage, a predefined off-state gate-to-source voltage, and a predefined off-state drain-to-source voltage.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
  • Publication number: 20200194544
    Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 18, 2020
    Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
  • Patent number: 10679983
    Abstract: A semiconductor body having a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer and forming a first surface of the semiconductor body is provided. At least two trenches extend from the first surface of the semiconductor body through the source region layer and the body region layer. In each of the trenches a gate electrode and a gate dielectric are formed. Diode regions are directly adjacent to each of the at least two trenches. The diode regions extend from the first surface of the semiconductor body through the source region layer and the body region layer. The diode regions include a first region and a second region. A doping concentration in the diode regions varies such that a doping concentration is higher near the first surface than at the bottom of the trench.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: June 9, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Dethard Peters, Romain Esteve
  • Publication number: 20200161433
    Abstract: Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and non-linear junctions formed with the SiC material at the bottom of other gate trenches. In other embodiments, the SiC device has the shielding regions at the bottom of the gate trenches and arranged in rows which run in a direction transverse to a lengthwise extension of the trenches. In still other embodiments, the SiC device has the shielding regions and the non-linear junctions, and wherein the shielding regions are arranged in rows which run in a direction transverse to a lengthwise extension of the trenches.
    Type: Application
    Filed: March 15, 2019
    Publication date: May 21, 2020
    Inventors: Caspar Leendertz, Romain Esteve, Anton Mauder, Andreas Meiser, Bernd Zippelius
  • Patent number: 10586845
    Abstract: According to an embodiment of a semiconductor device, the device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of source regions of a first conductivity type are formed in the SiC substrate and extend lengthwise in parallel in a second direction which is transverse to the first direction. Rows of body regions of a second conductivity type opposite the first conductivity type are formed in the SiC substrate below the rows of source regions. Rows of body contact regions of the second conductivity type are formed in the SiC substrate. The rows of body contact regions extend lengthwise in parallel in the second direction. First shielding regions of the second conductivity type are formed deeper in the SiC substrate than the rows of body regions.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: March 10, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse, Caspar Leendertz, Shiqin Niu, Dethard Peters, Ralf Siemieniec, Bernd Zippelius
  • Patent number: 10580878
    Abstract: A SiC device with a doped buried region is provided. The doped buried region may be formed by: forming a first trench which extends into a first side of a SiC epitaxial layer of a first conductivity type, the first trench terminating at a first depth in the SiC epitaxial layer; at least partly filling the first trench with an epitaxial material of a second conductivity type opposite the first conductivity type; forming a second trench which extends into the first side of the SiC epitaxial layer so that the second trench overlaps the first trench, the second trench terminates at a second depth in the SiC epitaxial layer which is less than the first depth, and the epitaxial material in the first trench laterally extends below a bottom of the second trench; and forming a gate electrode in the second trench and electrically insulated from the SiC epitaxial layer.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: March 3, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ravi Keshav Joshi, Rudolf Elpelt, Romain Esteve
  • Publication number: 20200058760
    Abstract: A SiC device with a doped buried region is provided. The doped buried region may be formed by: forming a first trench which extends into a first side of a SiC epitaxial layer of a first conductivity type, the first trench terminating at a first depth in the SiC epitaxial layer; at least partly filling the first trench with an epitaxial material of a second conductivity type opposite the first conductivity type; forming a second trench which extends into the first side of the SiC epitaxial layer so that the second trench overlaps the first trench, the second trench terminates at a second depth in the SiC epitaxial layer which is less than the first depth, and the epitaxial material in the first trench laterally extends below a bottom of the second trench; and forming a gate electrode in the second trench and electrically insulated from the SiC epitaxial layer.
    Type: Application
    Filed: August 20, 2018
    Publication date: February 20, 2020
    Inventors: Ravi Keshav Joshi, Rudolf Elpelt, Romain Esteve