Abstract: A magnetic sensing circuit includes a circuit portion including: a main half-bridge including series-connected main tunnel magnetoresistive sensor elements TMR1 and TMR2; a first auxiliary half-bridge connected in parallel to the main half-bridge and including series-connected auxiliary tunnel magnetoresistive sensor elements TMR3 and TMR4 with an output voltage emerging from the connection between TMR1 and TMR3 and between TMR2 and TMR4; wherein a reference magnetization of the magnetoresistive sensor element TMR1 and TMR3 are respectively oriented substantially antiparallel with respect to a reference magnetization of the magnetoresistive sensor element TMR2 and TMR4; and wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of about 180°/n, where n is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.

Abstract: A magnetic sensing circuit includes a circuit portion including: a main half-bridge including series-connected main tunnel magnetoresistive sensor elements TMR1 and TMR2; a first auxiliary half-bridge connected in parallel to the main half-bridge and including series-connected auxiliary tunnel magnetoresistive sensor elements TMR3 and TMR4 with an output voltage emerging from the connection between TMR1 and TMR3 and between TMR2 and TMR4; wherein a reference magnetization of the magnetoresistive sensor element TMR1 and TMR3 are respectively oriented substantially antiparallel with respect to a reference magnetization of the magnetoresistive sensor element TMR2 and TMR4; and wherein said first auxiliary half-bridge has a sensing axis that differs from the sensing axis of the main half bridge by an angle of about 180°/n, where n is the harmonic number to be canceled. The magnetic sensing circuit allows for sensing of external magnetic fields having high magnitude, with reduced angular error.

Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.

Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.