Patents by Inventor Romain Ritzenthaler

Romain Ritzenthaler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a dual work function semiconductor device
    Patent number: 9245759
    Abstract: A method of manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method includes providing a substrate having first and second areas for forming first and second transistor types. The method additionally includes forming a dielectric layer on the substrate, which extends to cover at least parts of the first and second areas. The method additionally includes forming a first metal layer/stack on the dielectric layer in the first area, where the first metal layer/stack comprises a first work function-shifting element. The method additionally includes forming a second metal layer/stack on the first metal layer in the first area and on the dielectric layer in the second area, where the second metal layer/stack comprises a second work function-shifting element.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: January 26, 2016
    Assignee: IMEC
    Inventors: Tom Schram, Christian Caillat, Alessio Spessot, Pierre Fazan, Lars-Ake Ragnarsson, Romain Ritzenthaler
  • METHOD FOR MANUFACTURING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE
    Publication number: 20140106556
    Abstract: A method of manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method includes providing a substrate having first and second areas for forming first and second transistor types. The method additionally includes forming a dielectric layer on the substrate, which extends to cover at least parts of the first and second areas. The method additionally includes forming a first metal layer/stack on the dielectric layer in the first area, where the first metal layer/stack comprises a first work function-shifting element. The method additionally includes forming a second metal layer/stack on the first metal layer in the first area and on the dielectric layer in the second area, where the second metal layer/stack comprises a second work function-shifting element.
    Type: Application
    Filed: October 7, 2013
    Publication date: April 17, 2014
    Applicant: IMEC
    Inventors: Tom Schram, Christian Caillat, Alessio Spessot, Pierre Fazan, Lars-Ake Ragnarsson, Romain Ritzenthaler