Patents by Inventor Romain Sappey
Romain Sappey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9772289Abstract: Defect detection and photoluminescence measurement of a sample directing a beam of oblique-illumination wavelength light onto a portion of the sample, directing a beam of normal-illumination wavelength light for causing one or more photoluminescing defects of the sample to emit photoluminescent light onto a portion of the sample, collecting defect scattered radiation or photoluminescence radiation from the sample, separating the radiation from the sample into a first portion of radiation in the visible spectrum, a second portion of radiation including the normal-illumination wavelength light, and at least a third portion of radiation including the oblique-illumination wavelength light, measuring one or more characteristics of the first portion, the second portion or the third portion of radiation; detecting one or more photoluminescence defects or one or more scattering defects based on the measured one or more characteristics of the first portion, the second portion or the third portion of radiation.Type: GrantFiled: May 27, 2016Date of Patent: September 26, 2017Assignee: KLA-Tencor CorporationInventor: Romain Sappey
-
Publication number: 20160377548Abstract: Defect detection and photoluminescence measurement of a sample directing a beam of oblique-illumination wavelength light onto a portion of the sample, directing a beam of normal-illumination wavelength light for causing one or more photoluminescing defects of the sample to emit photoluminescent light onto a portion of the sample, collecting defect scattered radiation or photoluminescence radiation from the sample, separating the radiation from the sample into a first portion of radiation in the visible spectrum, a second portion of radiation including the normal-illumination wavelength light, and at least a third portion of radiation including the oblique-illumination wavelength light, measuring one or more characteristics of the first portion, the second portion or the third portion of radiation; detecting one or more photoluminescence defects or one or more scattering defects based on the measured one or more characteristics of the first portion, the second portion or the third portion of radiation.Type: ApplicationFiled: May 27, 2016Publication date: December 29, 2016Inventor: Romain Sappey
-
Patent number: 9410890Abstract: One embodiment relates to a computer-implemented method of processing spectral luminescence mapping data obtained from a substrate, the substrate having an epitaxial layer stack that includes a multiple quantum well. A spectral luminescence and an epi thickness at a location on the substrate are obtained. A spectral modulation for the location may be computed given the epi thickness and material indices of refraction. The underlying luminescence spectrum may then be generated by dividing the measured spectral luminescence by the spectral modulation. Subsequently, a peak wavelength and other parameters may be obtained from the underlying luminescence spectrum. In another embodiment, the underlying luminescence spectrum may be determined, without the epi thickness measurement, using a self-consistent technique. Another embodiment relates to an apparatus for spectral luminescence mapping and epitaxial thickness measurement. Other embodiments, aspects and features are also disclosed.Type: GrantFiled: March 12, 2013Date of Patent: August 9, 2016Assignee: KLA-Tencor CorporationInventor: Romain Sappey
-
Patent number: 9354177Abstract: Defect detection and photoluminescence measurement of a sample directing a beam of oblique-illumination wavelength light onto a portion of the sample, directing a beam of normal-illumination wavelength light for causing one or more photoluminescing defects of the sample to emit photoluminescent light onto a portion of the sample, collecting defect scattered radiation or photoluminescence radiation from the sample, separating the radiation from the sample into a first portion of radiation in the visible spectrum, a second portion of radiation including the normal-illumination wavelength light, and at least a third portion of radiation including the oblique-illumination wavelength light, measuring one or more characteristics of the first portion, the second portion or the third portion of radiation; detecting one or more photoluminescence defects or one or more scattering defects based on the measured one or more characteristics of the first portion, the second portion or the third portion of radiation.Type: GrantFiled: March 14, 2014Date of Patent: May 31, 2016Assignee: KLA-Tencor CorporationInventor: Romain Sappey
-
Publication number: 20150001421Abstract: Defect detection and photoluminescence measurement of a sample directing a beam of oblique-illumination wavelength light onto a portion of the sample, directing a beam of normal-illumination wavelength light for causing one or more photoluminescing defects of the sample to emit photoluminescent light onto a portion of the sample, collecting defect scattered radiation or photoluminescence radiation from the sample, separating the radiation from the sample into a first portion of radiation in the visible spectrum, a second portion of radiation including the normal-illumination wavelength light, and at least a third portion of radiation including the oblique-illumination wavelength light, measuring one or more characteristics of the first portion, the second portion or the third portion of radiation; detecting one or more photoluminescence defects or one or more scattering defects based on the measured one or more characteristics of the first portion, the second portion or the third portion of radiation.Type: ApplicationFiled: March 14, 2014Publication date: January 1, 2015Applicant: KLA-Tencor CorporationInventor: Romain Sappey
-
Patent number: 8736831Abstract: Various embodiments for substrate inspection are provided.Type: GrantFiled: May 15, 2012Date of Patent: May 27, 2014Assignee: KLA-Tencor Corp.Inventors: Mahendra Prabhu Ramachandran, Steven W. Meeks, Romain Sappey
-
Publication number: 20130308124Abstract: Various embodiments for substrate inspection are provided.Type: ApplicationFiled: May 15, 2012Publication date: November 21, 2013Applicant: KLA-TENCOR CORPORATIONInventors: Mahendra Prabhu Ramachandran, Steven W. Meeks, Romain Sappey
-
Publication number: 20130242300Abstract: One embodiment relates to a computer-implemented method of processing spectral luminescence mapping data obtained from a substrate, the substrate having an epitaxial layer stack that includes a multiple quantum well. A spectral luminescence and an epi thickness at a location on the substrate are obtained. A spectral modulation for the location may be computed given the epi thickness and material indices of refraction. The underlying luminescence spectrum may then be generated by dividing the measured spectral luminescence by the spectral modulation. Subsequently, a peak wavelength and other parameters may be obtained from the underlying luminescence spectrum. In another embodiment, the underlying luminescence spectrum may be determined, without the epi thickness measurement, using a self-consistent technique. Another embodiment relates to an apparatus for spectral luminescence mapping and epitaxial thickness measurement. Other embodiments, aspects and features are also disclosed.Type: ApplicationFiled: March 12, 2013Publication date: September 19, 2013Applicant: KLA-TENCOR CORPORATIONInventor: Romain SAPPEY
-
Patent number: 7847954Abstract: A system with two unequal path interferometers, with a first flat, a second flat, and a cavity between the first and second flats, a holder to receive an object in the cavity such that an optical path remains open between the first and second flats, and a motor coupled to the holder such that the object may be tilted in the cavity to allow for measurements of, and a radiation assembly to direct collimated radiation to the interferometer assembly, a collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the radiation, record interferograms, extract phases of the interferograms to produce phase maps, determine from each map areas with high slopes, tilt the holder to allow measurement of the high slope areas, and process measurement that covers the entire surface of the object.Type: GrantFiled: May 15, 2008Date of Patent: December 7, 2010Assignee: KLA-Tencor CorporationInventors: Shouhong Tang, Romain Sappey
-
Publication number: 20090284734Abstract: In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, a wafer holder to receive an object in the cavity such that an optical path remains open at an outer annual area between the first reference flat and the second reference flat and at least one wafer holder motor coupled to the wafer holder such that an object may be tilted in the cavity as to allow for measurements of local areas of interest, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plurType: ApplicationFiled: May 15, 2008Publication date: November 19, 2009Applicant: KLA-TENCOR CORPORATIONInventors: Shouhong Tang, Romain Sappey
-
Patent number: 7554654Abstract: In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.Type: GrantFiled: January 26, 2007Date of Patent: June 30, 2009Assignee: KLA-Tencor CorporationInventors: Steven W. Meeks, Romain Sappey, Tom Carr
-
Patent number: 7505143Abstract: In one embodiment, a method of dynamic reference plane compensation, comprises impinging radiation from a first radiation source onto a surface of an object; generating an uncompensated measurement signal from radiation reflected from a first location on the surface and a second location; generating a compensation signal from radiation reflected from a third location and a fourth location on the surface; and generating a compensated measurement signal using the uncompensated measurement signal and the compensation signal.Type: GrantFiled: May 17, 2005Date of Patent: March 17, 2009Assignee: KLA-Tencor CorporationInventors: Harald F. Hess, Thomas Daniel Carr, Romain Sappey
-
Publication number: 20080180656Abstract: In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.Type: ApplicationFiled: January 26, 2007Publication date: July 31, 2008Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Steven W. Meeks, ROMAIN SAPPEY, TOM CARR
-
Publication number: 20060262291Abstract: In one embodiment, a method of dynamic reference plane compensation, comprises impinging radiation from a first radiation source onto a surface of an object; generating an uncompensated measurement signal from radiation reflected from a first location on the surface and a second location; generating a compensation signal from radiation reflected from a third location and a fourth location on the surface; and generating a compensated measurement signal using the uncompensated measurement signal and the compensation signal.Type: ApplicationFiled: May 17, 2005Publication date: November 23, 2006Inventors: Harald Hess, Thomas Carr, Romain Sappey
-
Publication number: 20060256345Abstract: In embodiments, techniques for interferometry measurements in disturbed environments are described. The disturbed environment may include one or more variations such as pressure variations and/or thermal variations. In one embodiment, a difference between an optical path of a first beam and an optical path of a second beam is detected. One or more of the first or second beams may be encased in a shroud proximate to the disturbed environment. The method may further couple a window to the shroud in proximity to the disturbed environment, e.g., to reduce the negative effects of the disturbed environment.Type: ApplicationFiled: May 12, 2005Publication date: November 16, 2006Inventor: Romain Sappey