Patents by Inventor Roman CHALYKH

Roman CHALYKH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-shift mask for extreme ultraviolet lithography
    Patent number: 11372323
    Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: June 28, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanseok Seo, SeongSue Kim, Taehoon Lee, Roman Chalykh
  • Phase-shift mask for extreme ultraviolet lithography
    Patent number: 10719008
    Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: July 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanseok Seo, SeongSue Kim, Taehoon Lee, Roman Chalykh
  • PHASE-SHIFT MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY
    Publication number: 20200209732
    Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
    Type: Application
    Filed: March 10, 2020
    Publication date: July 2, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hwanseok SEO, SeongSue Kim, Taehoon Lee, Roman Chalykh
  • Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same
    Patent number: 10274820
    Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: April 30, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanchul Jeon, Munja Kim, Sungwon Kwon, Byunggook Kim, Roman Chalykh, Yongseok Jung, Jaehyuck Choi
  • PELLICLE FOR PREVENTING THERMAL ACCUMULATION AND EXTREME ULTRA-VIOLET LITHOGRAPHY APPARATUS HAVING THE SAME
    Publication number: 20180203346
    Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hwanchul JEON, Munja KIM, Sungwon KWON, Byunggook KIM, Roman CHALYKH, Yongseok JUNG, Jaehyuck CHOI
  • PHASE-SHIFT MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY
    Publication number: 20180143527
    Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
    Type: Application
    Filed: June 16, 2017
    Publication date: May 24, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hwanseok SEO, SeongSue KIM, Taehoon LEE, Roman CHALYKH
  • Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same
    Patent number: 9952502
    Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: April 24, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanchul Jeon, Munja Kim, Sungwon Kwon, Byunggook Kim, Roman Chalykh, Yongseok Jung, Jaehyuck Choi
  • PELLICLE FOR PREVENTING THERMAL ACCUMULATION AND EXTREME ULTRA-VIOLET LITHOGRAPHY APPARATUS HAVING THE SAME
    Publication number: 20160334698
    Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.
    Type: Application
    Filed: January 12, 2016
    Publication date: November 17, 2016
    Inventors: Hwanchul JEON, Munja KIM, Sungwon KWON, Byunggook KIM, Roman CHALYKH, Yongseok JUNG, Jaehyuck CHOI