Patents by Inventor Roman Drachev

Roman Drachev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANAGING GROWTH OF SILICON CARBIDE CRYSTALS
    Publication number: 20250347029
    Abstract: SiC substrates are in demand for high power applications such as electric vehicles, solar panels, and industrial electronics. A physical vapor transport (PVT) apparatus for growth of silicon carbide (SiC) ingots can be improved by adding moveable heaters. The heaters can be either inductive or resistive. By tightly controlling temperature gradients during the growth phase, and by adding an in-situ anneal following the growth phase, the resulting SiC crystal can be taller, with fewer defects, and can be less likely to crack during subsequent grinding or polishing operations.
    Type: Application
    Filed: May 13, 2024
    Publication date: November 13, 2025
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Santhanaraghavan PARTHASARATHY, Roman DRACHEV
  • Graphite crucible for sublimation growth of SiC crystal
    Patent number: 10435810
    Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 8, 2019
    Assignee: DOW SILICONES CORPORATION
    Inventors: Mark Loboda, Roman Drachev, Darren Hansen, Edward Sanchez
  • Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
    Patent number: 9797064
    Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: October 24, 2017
    Assignee: DOW CORNING CORPORATION
    Inventors: Mark Loboda, Roman Drachev, Darren Hansen, Edward Sanchez
  • SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY
    Publication number: 20170137963
    Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
    Type: Application
    Filed: January 30, 2017
    Publication date: May 18, 2017
    Inventors: Mark Loboda, Roman Drachev, Darren Hansen, Edward Sanchez
  • SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY
    Publication number: 20140220296
    Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
    Type: Application
    Filed: October 18, 2013
    Publication date: August 7, 2014
    Applicant: Dow Corning Corporation
    Inventors: Mark Loboda, Roman Drachev, Darren Hansen, Edward Sanchez