Abstract: An assembly for a power module includes an electrically isolating base body and first and second electrically conductive structures embedded in the base body. The first and electrically conductive structures are configured to carry different voltages during normal operation of the power module. The first and the second electrically conductive structure each comprise a first region that is not covered by the base body. The first region of the first conductive structure is arranged in a hole of the base body and is retracted with respect to an opening of the hole. The hole is filled with an electrically isolating material that covers the first region of the first conductive structure.

Abstract: A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.

Abstract: A semiconductor power module (10) and method of manufacture thereof comprises a substrate layer (11) forming a baseplate and a molded body coupled thereto. The molded body has at least one fiber and/or mesh structure forming a local reinforcement portion embedded in the molded body. The semiconductor power module may be part of a semiconductor device having electronics coupled with the semiconductor power module (10).

Abstract: A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.