Abstract: Techniques for storage optimization in a distributed object store are described. A storage optimization service of a provider network monitors changes to data objects in a distributed object store that are part of a data lake and are referenced by a table index. The storage optimization service determines whether particular storage optimizations involving the data objects would be beneficial, prioritizes the ordering of these optimizations with a focus on performing impactful optimizations first, while intelligently scheduling the optimizations to avoid overutilization of available resources.

Abstract: A method and system are used to generate random values for Physical Unclonable Function (PUF) for use in cryptographic applications. A PUF value generation apparatus comprises two dielectric breakdown based anti-fuses and at least one current limiting circuit connected between anti-fuses and power rails. Two anti-fuses are connected in parallel for value generation in programming by applying high voltage to both anti-fuses at the same time. Time for dielectric breakdown under high voltage stress is of random nature and therefore unique for each anti-fuse cell. Therefore the random time to breakdown causes one cell to break before another, causing high breakdown current through the broken cell. Once high breakdown current through one broken or programmed cell is established, a voltage drop across a current limiting circuit leads to decreased voltage across both cells, thereby slowing the time dependent breakdown process in the second cell and preventing it from breakage under programming conditions.

Abstract: A method and system are used to generate random values for Physical Unclonable Function (PUF) for use in cryptographic applications. A PUF value generation apparatus comprises two dielectric breakdown based anti-fuses and at least one current limiting circuit connected between anti-fuses and power rails. Two anti-fuses are connected in parallel for value generation in programming by applying high voltage to both anti-fuses at the same time. Time for dielectric breakdown under high voltage stress is of random nature and therefore unique for each anti-fuse cell. Therefore the random time to breakdown causes one cell to break before another, causing high breakdown current through the broken cell. Once high breakdown current through one broken or programmed cell is established, a voltage drop across a current limiting circuit leads to decreased voltage across both cells, thereby slowing the time dependent breakdown process in the second cell and preventing it from breakage under programming conditions.