Patents by Inventor Roman Gorbachev

Roman Gorbachev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250033339
    Abstract: Provided herein is a method for transferring a material from a first substrate to a second substrate via a flexible intermediate substrate comprising a support layer and a metallic adhesion layer. The method comprises lifting the material from the first substrate with the intermediate substrate, the lifting comprising adhering the material to the metallic adhesion layer by Van der Waals adhesion between the material and the metallic adhesion layer. The method comprises depositing the material from the intermediate substrate on to the second substrate, the depositing comprising adhering the material to the second substrate by Van der Waals adhesion between the material and the second substrate. Also provided herein is a method of forming a heterostructure by removing material from one or more substrates via a flexible intermediate substrate comprising a support layer and metallic adhesion layer. A flexible substrate for performing the same is also provided.
    Type: Application
    Filed: April 24, 2023
    Publication date: January 30, 2025
    Inventors: Roman Gorbachev, Alex Summerfield, Nicholas Clark, Wendong Wang, Matthew Hamer
  • Patent number: 9548364
    Abstract: This application relates to graphene based heterostructures and methods of making graphene based heterostructures. The graphene heterostructures comprise: i) a first encapsulation layer; ii) a second encapsulation layer; and iii) a graphene layer. The heterostructures find application in electronic devices.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: January 17, 2017
    Assignee: The University of Manchester
    Inventors: Andre Geim, Kostya Novoselov, Roman Gorbachev, Leonid Ponomarenko
  • Patent number: 9318591
    Abstract: This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: April 19, 2016
    Assignee: The University of Manchester
    Inventors: Andre Geim, Konstantin Novoselov, Roman Gorbachev, Leonid Ponomarenko, Liam Britnell
  • Publication number: 20140008611
    Abstract: This application relates to graphene based heterostructures and methods of making graphene based heterostructures. The graphene heterostructures comprise: i) a first encapsulation layer; ii) a second encapsulation layer; and iii) a graphene layer. The heterostructures find application in electronic devices.
    Type: Application
    Filed: March 22, 2012
    Publication date: January 9, 2014
    Applicant: THE UNIVERSITY OF MANCHESTER
    Inventors: Andre Geim, Kostya Novoselov, Roman Gorbachev, Leonid Ponomarenko
  • Publication number: 20140008616
    Abstract: This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
    Type: Application
    Filed: March 22, 2012
    Publication date: January 9, 2014
    Applicant: THE UNIVERSITY OF MANCHESTER
    Inventors: Andre Geim, Kostya Novoselov, Roman Gorbachev, Leonid Ponomarenko, L. Britnell