Patents by Inventor Roman Koerner

Roman Koerner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240372329
    Abstract: A semiconductor component for emitting laser light includes a main body having at least one mesa portion with an emission region for the laser light. The emission region includes a first mirror portion, a second mirror portion, and an active portion arranged between the first mirror portion and the second mirror portion. The active portion serves to generate the laser light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, and a metallic polarization grating arranged on a surface of the main body on the emission region.
    Type: Application
    Filed: July 18, 2024
    Publication date: November 7, 2024
    Inventors: Roman Koerner, Alexander Weigl
  • Publication number: 20240356304
    Abstract: A VCSEL includes a vertical resonator structure that includes a first Bragg reflector, a second Bragg reflector, and an active region, and a laser diode structure that includes a p-doped first region and an n-doped second region arranged on two sides of the active region, respectively. The vertical resonator structure further includes a tunnel diode structure having a highly n-doped first semiconductor layer and a highly p-doped second semiconductor layer. The VCSEL further includes an electrical contact arrangement having a first metal contact and a second metal contact defining a current path so that, for a voltage applied to the contact arrangement that is a reverse voltage in relation to the laser diode structure and a forward voltage in relation to the tunnel diode structure, charge carriers are conducted away from the vertical resonator structure via the tunnel diode structure into the second metal contact.
    Type: Application
    Filed: June 5, 2024
    Publication date: October 24, 2024
    Inventor: Roman Koerner
  • Publication number: 20240128719
    Abstract: A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Roman Koerner, Alexander Weigl, Holger Joachim Moench, Berthold Schmidt
  • Patent number: 11862933
    Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: January 2, 2024
    Assignee: TRUMPF PHOTONIC COMPONENTS GMBH
    Inventors: Roman Koerner, Alexander Weigl
  • Publication number: 20230006423
    Abstract: A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.
    Type: Application
    Filed: September 8, 2022
    Publication date: January 5, 2023
    Inventors: Roman Koerner, Jenny Tempeler
  • Publication number: 20220416504
    Abstract: A semiconductor component for emitting light includes a main body that comprises at least one mesa body. The mesa body has an emission region for emitting the light. The emission region is assigned a first mirror portion, a second mirror portion, and an active portion arranged between the two mirror portions and serving to produce the light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, with at least one stress element that is attached to a surface of the main body. The stress element is configured to generate in the main body a material stress which has an effect on one or more polarization properties of the emitted light.
    Type: Application
    Filed: June 24, 2022
    Publication date: December 29, 2022
    Inventors: Andreas Popp, Alexander Marc Van der Lee, Sven Bader, Roman Koerner, Jenny Tempeler, Michael Smeets, Andrea Ott, Markus Herper, Daniela Stange
  • Publication number: 20220247152
    Abstract: A method of fabricating a Vertical Cavity Surface Emitting Laser(VCSEL) device includes providing a first structure comprising a VCSEL layer structure on a wafer. The first structure has a non-planar first structure top surface with varying height levels and includes one or more electrical contact areas. The method further includes applying one or more layers of cover material on the non-planar first structure top surface with a thickness such that a lowest height level of a cover material top surface is equal to or above the highest height level of the non-planar first structure top surface, to obtain a second structure having a second structure top surface, planarizing the second structure top surface, and producing one or more first electrical vias from the second structure top surface through the one or more layers of cover material for electrical connection to the one or more electrical contact areas.
    Type: Application
    Filed: April 12, 2022
    Publication date: August 4, 2022
    Inventors: Roman Koerner, Jenny Tempeler, Michael Smeets
  • Publication number: 20210296853
    Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 23, 2021
    Inventors: Roman Koerner, Alexander Weigl