Abstract: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween.

Abstract: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween.