Abstract: Embodiments described herein relate to process systems for cleaning semiconductor process chamber components. The process systems include a process chamber having process chamber components. The process chamber components include a substrate support disposed within a chamber volume of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and is configured to monitor at least one characteristic of the volume of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and is communicatively coupled to the sensor.

Abstract: Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

Abstract: Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

Abstract: Embodiments of the invention provide a method for removing contaminants from a plating bath contained in a weir-type plater during idle times. The method broadly includes positioning a lower portion of a substrate support assembly into the plating bath and rotating the substrate support assembly at a rotation rate of between about 1 rpm and about 60 rpm for between about 5 seconds and about 30 seconds to circulate the plating solution such that contaminants accumulating on the surface of the plating solution are urged to flow over a weir of the weir-type plater.

Abstract: A metal seed layer on a substrate is pre-cleaned prior to formation of an electrochemically deposited metal fill layer. A liquid-based pre-clean may include, for example, an agitated rinse, an etchant solution, a surfactant solution and/or a solvent-solution to remove organic and/or other contaminants from the metal seed layer. A dry pre-clean may utilize, for example, a hydrogen and/or an oxygen plasma to remove contaminants and/or reduce a metal oxide of the seed layer. In at least one embodiment, the reduction of the metal oxide may occur at a pressure in excess of 0.1 atmosphere.