Abstract: A workpiece composite includes a preform part and a gel accommodated in a recess in the preform, the recess being enclosed by at least one edge which serves as a creep barrier to prevent the gel from spreading. The at least one edge of the recess defines a termination point of at least one surface which is provided with a coating made of an oleophobic material in an area adjacent to the at least one edge.

Abstract: A workpiece composite includes a preform part and a gel accommodated in a recess in the preform, the recess being enclosed by at least one edge which serves as a creep barrier to prevent the gel from spreading. The at least one edge of the recess defines a termination point of at least one surface which is provided with a coating made of an oleophobic material in an area adjacent to the at least one edge.

Abstract: The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often significantly below the theoretically possible values. The inventive method enables the efficiency of the relevant component to be clearly increased without substantially changing the growth parameters of the various epitaxial layers. In order to improve the efficiency of the component, the crystal is morphologically changed when the growth of the component is interrupted at the point in the overall process at which the quantum dots of a layer have just been covered. The growth front is smoothed at the same time, leading to, for example, a reduction in waveguide loss as the thickness of the waveguide is more homogeneous if the relevant component has one such waveguide.

Abstract: The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often significantly below the theoretically possible values. The inventive method enables the efficiency of the relevant component to be clearly increased without substantially changing the growth parameters of the various epitaxial layers. In order to improve the efficiency of the component, the crystal is morphologically changed when the growth of the component is interrupted at the point in the overall process at which the quantum dots of a layer have just been covered. The growth front is smoothed at the same time, leading to, for example, a reduction in waveguide loss as the thickness of the waveguide is more homogeneous if the relevant component has one such waveguide.