Patents by Inventor Roman Shuba
Roman Shuba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20160181463Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.Type: ApplicationFiled: March 1, 2016Publication date: June 23, 2016Applicant: First Solar, Inc.Inventors: Donald Franklin Foust, Hongbo Cao, Laura Anne Clark, Robert Andrew Garber, Scott Daniel Feldman-Peabody, Wyatt Keith Metzger, Yinghui Shan, Roman Shuba
-
Patent number: 9276157Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.Type: GrantFiled: August 31, 2012Date of Patent: March 1, 2016Assignee: First Solar, Inc.Inventors: Donald Franklin Foust, Hongbo Cao, Laura Anne Clark, Robert Andrew Garber, Scott Daniel Feldman-Peabody, Wyatt Keith Metzger, Yinghui Shan, Roman Shuba
-
Patent number: 9231134Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.Type: GrantFiled: August 31, 2012Date of Patent: January 5, 2016Assignee: First Solar, Inc.Inventors: Donald Franklin Foust, Hongbo Cao, Laura Anne Clark, Robert Andrew Garber, Scott Daniel Feldman-Peabody, Wyatt Keith Metzger, Yinghui Shan, Roman Shuba
-
Publication number: 20150187981Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.Type: ApplicationFiled: March 6, 2015Publication date: July 2, 2015Applicant: FIRST SOLAR, INC.Inventors: Bastiaan Arie Korevaar, Roman Shuba
-
Patent number: 9054241Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.Type: GrantFiled: August 30, 2013Date of Patent: June 9, 2015Assignee: First Solar, Inc.Inventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Roman Shuba
-
Publication number: 20140065763Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.Type: ApplicationFiled: August 31, 2012Publication date: March 6, 2014Applicant: GENERAL ELECTRIC COMPANYInventors: Donald Franklin Foust, Hongbo Cao, Laura Anne Clark, Robert Andrew Garber, Scott Daniel Feldman-Peabody, Wyatt Keith Metzger, Yinghui Shan, Roman Shuba
-
Publication number: 20140060635Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.Type: ApplicationFiled: August 31, 2012Publication date: March 6, 2014Applicant: GENERAL ELECTRIC COMPANYInventors: Donald Franklin Foust, Hongbo Cao, Laura Anne Clark, Robert Andrew Garber, Scott Daniel Feldman-Peabody, Wyatt Keith Metzger, Yinghui Shan, Roman Shuba
-
Publication number: 20140000701Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.Type: ApplicationFiled: August 30, 2013Publication date: January 2, 2014Inventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Roman Shuba
-
Patent number: 8524524Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.Type: GrantFiled: April 22, 2010Date of Patent: September 3, 2013Assignee: General Electric CompanyInventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Roman Shuba
-
Patent number: 8481152Abstract: A treated refractory material includes a porous refractory material having one or more protective materials disposed within pores of the refractory material. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory material.Type: GrantFiled: August 14, 2008Date of Patent: July 9, 2013Assignee: General Electric CompanyInventors: Roman Shuba, Wei Chen, Anthony Mark Thompson
-
Publication number: 20130108789Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.Type: ApplicationFiled: October 31, 2011Publication date: May 2, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Roman Shuba
-
Patent number: 8105683Abstract: A treated refractory material includes a sintered porous refractory material having one or more protective materials disposed within pores of the refractory material, wherein the protective material is selected from the group consisting of aluminum oxide, chromium oxide, silica, rare earth oxides, rare earth zirconates, titanium oxide, mullite, zirconium oxide, zirconium silicate, yttrium oxide, magnesium oxide, iron oxide, and blends thereof. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory.Type: GrantFiled: March 7, 2007Date of Patent: January 31, 2012Assignee: General Electric CompanyInventors: Anthony Mark Thompson, Roman Shuba, Peter Joel Meschter, Krishan Lal Luthra, Vikas Behrani
-
Publication number: 20110259423Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.Type: ApplicationFiled: April 22, 2010Publication date: October 27, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Roman Shuba
-
Publication number: 20100040778Abstract: A treated refractory material includes a porous refractory material having one or more protective materials disposed within pores of the refractory material. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory material.Type: ApplicationFiled: August 14, 2008Publication date: February 18, 2010Applicant: General Electric CompanyInventors: Roman Shuba, Wei Chen, Anthony Mark Thompson
-
Patent number: 7572425Abstract: A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power.Type: GrantFiled: September 14, 2007Date of Patent: August 11, 2009Assignee: General Electric CompanyInventors: Thomas Francis McNulty, Bruce Gordon Norman, Mark Philip D'Evelyn, Roman Shuba
-
Publication number: 20090188347Abstract: A treated refractory material includes a refractory material having a plurality of pores, wherein the refractory material comprises aluminum oxide, silicon oxide, magnesium oxide, chromium oxide, zirconium oxide, titanium oxide, calcium oxide, fireclay, silicon carbide, tungsten, mullite, dolomite, magnesite, magnesium aluminum oxide, chromite, magnetite, or a combination comprising at least one of the foregoing; and a protective material disposed within the plurality of pores of the refractory material, wherein the protective material is selected from the group consisting of aluminum oxide, chromium oxide, silica, rare earth oxides, rare earth zirconates, titanium oxide, mullite, zirconium oxide, zirconium silicate, yttrium oxide, magnesium oxide, iron oxide, and blends thereof.Type: ApplicationFiled: January 26, 2009Publication date: July 30, 2009Applicant: General Electric CompanyInventors: Wade Albert Taber, Wei Chen, Peter Joel Meschter, Roman Shuba
-
Publication number: 20090074647Abstract: A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power.Type: ApplicationFiled: September 14, 2007Publication date: March 19, 2009Applicant: GENERAL ELECTRIC COMPANYInventors: Thomas Francis McNulty, Bruce Gordon Norman, Mark Philip D'Evelyn, Roman Shuba
-
Publication number: 20080314446Abstract: A process for the manufacture of high-purity elemental silicon is described. The process includes the step of preparing a silica gel composition by reacting at least one organosilane compound with an aqueous composition, so as to form granules of the silica gel. A hydrocarbon species is then decomposed by way of a hydrocarbon cracking reaction in the presence of the silica gel composition, so that carbon resulting from the decomposition of the hydrocarbon species is deposited on the granules of the gel composition. Heating of the carbon-containing silica gel composition to an elevated temperature produces the elemental silicon product. Related methods for making photovoltaic cells, using the elemental silicon, are also described.Type: ApplicationFiled: June 25, 2007Publication date: December 25, 2008Applicant: GENERAL ELECTRIC COMPANYInventors: Thomas Francis McNulty, John Thomas Leman, Larry Neil Lewis, Mark Philip D'Evelyn, Victor Lienkong Lou, Roman Shuba
-
Publication number: 20080314445Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550° C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.Type: ApplicationFiled: June 25, 2007Publication date: December 25, 2008Applicant: GENERAL ELECTRIC COMPANYInventors: Thomas Francis McNulty, John Thomas Leman, Larry Neil Lewis, Mark Philip D'Evelyn, Victor Lienkong Lou, Roman Shuba, Kenrick Martin Lewis, Frank Dominic Mendicino, Johan Heinrich van Dongeren
-
Publication number: 20080216603Abstract: A treated refractory material includes a sintered porous refractory material having one or more protective materials disposed within pores of the refractory material, wherein the protective material is selected from the group consisting of aluminum oxide, chromium oxide, silica, rare earth oxides, rare earth zirconates, titanium oxide, mullite, zirconium oxide, zirconium silicate, yttrium oxide, magnesium oxide, iron oxide, and blends thereof. Methods of preparing the treated refractory material are also provided. The treated refractory material provides protection from the penetration of slag and extends the service life of the refractory.Type: ApplicationFiled: March 7, 2007Publication date: September 11, 2008Inventors: Anthony Mark Thompson, Roman Shuba, Peter Joel Meschter, Krishan Lal Luthra, Vikas Behrani