Abstract: A power semiconductor module with segmented base plate. One embodiment provides a semiconductor module including a base plate and at least two circuit carriers. The base plate includes at least two base plate segments spaced distant from one another. Each of the circuit carriers includes a ceramic substrate provided with at least a first metallization layer. Each of the circuit carriers is arranged on exactly one of the base plate segments. At least two of the circuit carriers are spaced distant from one another.

Abstract: One aspect relates to a power semiconductor arrangement includes a power semiconductor module which is mechanically connected to a heat sink. In order to improve the thermal cycling stability of the connection between a baseplate of the module and a circuit carrier connected thereto, recesses are provided in the baseplate. One aspect further relates to a power semiconductor module.

Abstract: A power semiconductor module comprises a housing. The housing comprises a casing and at least one coating of high resistance to surface tracking. A plurality of electrical conductors is provided on the housing. The coating is provided on a creepage distance that is provided between the electrical conductors.

Abstract: A power semiconductor module with segmented base plate. One embodiment provides a semiconductor module including a base plate and at least two circuit carriers. The base plate includes at least two base plate segments spaced distant from one another. Each of the circuit carriers includes a ceramic substrate provided with at least a first metallization layer. Each of the circuit carriers is arranged on exactly one of the base plate segments. At least two of the circuit carriers are spaced distant from one another.

Abstract: A power semiconductor module comprises a housing. The housing comprises a casing and at least one coating of high resistance to surface tracking. A plurality of electrical conductors is provided on the housing. The coating is provided on a creepage distance that is provided between the electrical conductors.

Abstract: A power semiconductor module is to be pressed to a heat sink with a first surface of a first side of a base plate. To reduce the heat transfer resistance between the base plate and the heat sink, the first surface has, at least in a state, when the power semiconductor module is not pressed against the heat sink, at least one inflection point.

Abstract: A power semiconductor module is to be pressed to a heat sink with a first surface of a first side of a base plate. To reduce the heat transfer resistance between the base plate and the heat sink, the first surface has, at least in a state, when the power semiconductor module is not pressed against the heat sink, at least one inflection point.

Abstract: One aspect relates to a power semiconductor arrangement includes a power semiconductor module which is mechanically connected to a heat sink. In order to improve the thermal cycling stability of the connection between a baseplate of the module and a circuit carrier connected thereto, recesses are provided in the baseplate. One aspect further relates to a power semiconductor module.

Abstract: A half-bridge circuit, in which an input signal that is applied between two input terminals can be picked up at a phase output comprises two switching transistors controlled by a respective control signal that is applied between a control electrode and an auxiliary electrode and two diodes. The first input terminal is connected to the first electrode of the first switching transistor and to the first diode's cathode. A second electrode of the first switching transistor is connected to the first diode's anode by means of the phase output, via a line, to a first electrode of the second switching transistor and to a cathode of the second diode. A second electrode of the second switching transistor is connected to an anode of the second diode and to the second input terminal. The auxiliary electrode of the first switching transistor is connected to the line of the phase output.

Abstract: The present invention relates to a configuration having a first shunt resistor and at least one second shunt resistor connected in parallel with the first shunt resistor. The load terminals of the shunt resistors are disposed at the front side of the shunt resistors and between a first and a second supply potential. The load terminals each have a large-area rear-side contact connection to which different potentials are applied.

Abstract: The present invention relates to a configuration having a first shunt resistor and at least one second shunt resistor connected in parallel with the first shunt resistor. The load terminals of the shunt resistors are disposed at the front side of the shunt resistors and between a first and a second supply potential. The load terminals each have a large-area rear-side contact connection to which different potentials are applied.