Abstract: The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

Abstract: A configuration is disclosed. In one aspect, the configuration includes a substantially planar electrode layer, in a first plane. The configuration further includes a substantially planar two-dimensional electron gas (2DEG) layer electrically connected in series with the electrode layer. The 2DEG layer is provided in a second plane substantially parallel with the first plane and located at a predetermined distance, in a direction orthogonal to the first plane, from the first plane. The 2DEG layer and the electrode layer are patterned such that the electrode layer overlays a part of the 2DEG layer, wherein the predetermined distance between the first plane and the second plane is selected to be sufficiently small for allowing electrostatic interaction between the electrode layer and the 2DEG layer.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: A configuration is disclosed. In one aspect, the configuration includes a substantially planar electrode layer, in a first plane. The configuration further includes a substantially planar two-dimensional electron gas (2DEG) layer electrically connected in series with the electrode layer. The 2DEG layer is provided in a second plane substantially parallel with the first plane and located at a predetermined distance, in a direction orthogonal to the first plane, from the first plane. The 2DEG layer and the electrode layer are patterned such that the electrode layer overlays a part of the 2DEG layer, wherein the predetermined distance between the first plane and the second plane is selected to be sufficiently small for allowing electrostatic interaction between the electrode layer and the 2DEG layer.