Abstract: The invention relates to the manufacture of a semiconductor device (10) with a semiconductor body (1) and a substrate (2) and comprising at least one semiconductor element (3), which semiconductor device is equipped with at least one connection region (4) and a superjacent strip-shaped connection conductor (5) which is connected to the connection region, which connection region and connection conductor are both recessed in a dielectric, and a dielectric region (6) of a first material is provided on the semiconductor body (1) at the location of the connection region (4) to be formed, after which the dielectric region (6) is coated with a dielectric layer (7) of a second material that differs from the first material, which dielectric layer is provided, at the location of the strip-shaped connection conductor (5) to be formed, with a strip-shaped recess (7A) which overlaps the dielectric region (6) and extends up to said dielectric region, and after the formation of the recess (7A) and the removal of the dielect