Abstract: A novel heating method and a novel gas inject schemes for a depositing semiconductor layers on wafers with improved disposition uniformity and disposition composition, deposition rates and decreased depletion rates. The novel heating and gas design can be readily changed in size to accommodate the ever increasing demand for larger substrates, increased batch sizes and increased deposition and heating efficiencies. The heating scheme can operate to 1500° C., and has a high resolution capability for tuning the temperature and gas flows for easy of setup and improved control and repeatability of the deposition process. This novel heating and gas inject scheme in conjunction with the unconventional usage of a non-quartz process chamber promises higher throughputs and higher wafer yields and reduced manufacturing costs for the manufacturing of silicon devices, silicon solar cells and white High Brightness LEDs.