Abstract: A CMP machine dresser. The dresser includes a substrate, a first conductive layer and a second conductive layer respectively disposed and isolated in the substrate, a plurality of diamonds mounted in the first conductive layer and the second conductive layer, and a bonding layer disposed on the substrate for attaching the diamonds. The first conductive layer and the second conductive layer detect the conductive materials penetrating the original position of the diamonds when any of the diamonds dislodges, so as to determine the diamonds dislodgement.

Abstract: A CMP machine dresser. The dresser includes a substrate, a first conductive layer and a second conductive layer respectively disposed and isolated in the substrate, a plurality of diamonds mounted in the first conductive layer and the second conductive layer, and a bonding layer disposed on the substrate for attaching the diamonds. The first conductive layer and the second conductive layer detect the conductive materials penetrating the original position of the diamonds when any of the diamonds dislodges, so as to determine the diamonds dislodgement.

Abstract: A CMP machine dresser. The dresser includes a substrate, a first conductive layer and a second conductive layer respectively disposed and isolated in the substrate, a plurality of diamonds mounted in the first conductive layer and the second conductive layer, and a bonding layer disposed on the substrate for attaching the diamonds. The first conductive layer and the second conductive layer detect the conductive materials penetrating the original position of the diamonds when any of the diamonds dislodges, so as to determine the diamonds dislodgement.

Abstract: The present invention discloses a method of optical correction for improving the pattern shrinkage caused by scattering of the light during photolithography processes, wherein the patterns on photomasks are corrected by providing aid patterns. Therefore, serifs or hammerheads are not necessary, and the costs can be decreased. According to the present invention, a chrome aid block is provided between the edges of the patterns. It is noted that the size of the chrome aid block is between ⅓ to ½ the wavelength of light used during exposure. Therefore, the pattern shrinkage caused by scattering of the light during exposure can be reduced, and there is no additional block formed on the photoresist layer. In addition, the standing wave effect can be prevented; thus, the pattern transfer is more accurate.