Patents by Inventor Ron Lopez

Ron Lopez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6777145
    Abstract: The present invention relates to a test structure which is formed on a reticle simultaneously with a pattern that will be used to build an integrated circuit device. The test structure comprises a large rectangular end and several rectangular shapes that extend from one side of the rectangular end in a parallel array. The width of the rectangular shape extensions is equal to the spacing between them and is the same as the width of the minimum feature size in the lithographic process to be monitored. A CD SEM is used to measure the edge width of the convex and concave sections of the structure as printed in photoresist at various focus settings and a plot of edge width vs. focus setting is generated. The intersection of the lines representing the convex section and concave section measurements indicates the best focus setting for the lithographic process.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: August 17, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Wen-Zhan Zhou, Hui-Kow Lim, Teng Hwee Ng, Ron Lopez, Goswami Indranil
  • Publication number: 20030224252
    Abstract: The present invention relates to a test structure which is formed on a reticle simultaneously with a pattern that will be used to build an integrated circuit device. The test structure comprises a large rectangular end and several rectangular shapes that extend from one side of the rectangular end in a parallel array. The width of the rectangular shape extensions is equal to the spacing between them and is the same as the width of the minimum feature size in the lithographic process to be monitored. A CD SEM is used to measure the edge width of the convex and concave sections of the structure as printed in photoresist at various focus settings and a plot of edge width vs. focus setting is generated. The intersection of the lines representing the convex section and concave section measurements indicates the best focus setting for the lithographic process.
    Type: Application
    Filed: May 30, 2002
    Publication date: December 4, 2003
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Wen-Zhan Zhou, Hui-Kow Lim, Teng Hwee Ng, Ron Lopez, Goswami Indranil