Patents by Inventor Ron R. Legario

Ron R. Legario has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9362223
    Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: June 7, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, HITACHI CHEMICIAL DUPONT MICROSYSTEMS, L.L.C.
    Inventors: Paul S. Andry, Sarah H. Knickerbocker, Ron R. Legario, Cornelia K. Tsang, Melvin P. Zussman
  • Publication number: 20150357283
    Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.
    Type: Application
    Filed: August 18, 2015
    Publication date: December 10, 2015
    Inventors: Paul S. Andry, Sarah H. Knickerbocker, Ron R. Legario, Cornelia K. Tsang, Melvin P. Zussman
  • Patent number: 9209128
    Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: December 8, 2015
    Assignees: International Business Machines Corporation, HITACHI CHEMICAL DUPONT MICROSYSTEMS, L.L.C.
    Inventors: Paul S. Andry, Sarah H. Knickerbocker, Ron R. Legario, Cornelia K. Tsang, Melvin P. Zussman
  • Publication number: 20150279779
    Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.
    Type: Application
    Filed: April 1, 2014
    Publication date: October 1, 2015
    Applicants: Hitachi Chemical DuPont Microsystems, L.L.C., International Business Machines Corporation
    Inventors: Paul S. Andry, Sarah H. Knickerbocker, Ron R. Legario, Cornelia K. Tsang, Melvin P. Zussman