Abstract: Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques such as ALD and PDL.

Abstract: A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, reactor pressure and/or reactant partial pressure, as opposed to static process conditions through various cycles, can be used to minimize film roughness and improve gap fill performance and film properties via the elimination or reduction of seam occurrence. Overall film roughness can be reduced by operating the initial growth cycle under conditions which optimize film smoothness, and then switching to conditions that will enhance conformality, gap fill and film properties for the subsequent process cycles. Film deposition characteristics can be changed by modulating one or more of a number of process parameters including wafer temperature, reactor pressure, reactant partial pressure and combinations of these.

Abstract: An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to an oxygen-containing gas to oxidize the layer of aluminum-containing precursor; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

Abstract: A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

Abstract: An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film.

Abstract: A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.

Abstract: A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

Abstract: A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

Abstract: A method and system are provided for endpoint detection of plasma chamber cleaning or plasma etch processes. Optical emission spectroscopy is utilized to determine a spectral emission ratio of two or more light emitting reaction components at wavelengths in close proximity. When a spectral emission ratio or derivative thereof or mathematical function thereof falls below a selected threshold value, the plasma process may be terminated within a calculated time from the threshold value prior to an endpoint value cutoff. Advantageously, the system and methods of the present invention provide real-time, in-situ monitoring of plasma clean or etch processes to optimize the process and avoid under-cleaning or over-cleaning.

Abstract: A method and system for real-time, in-situ measurement of a film being deposited onto a surface of a wafer in a tool during semiconductor, optical component and electro-optic component processing and manufacturing. The method and system include real-time, in-situ detecting and analyzing radiation within the tool which is reflected off a wafer surface and subsequently diffusely reflected off internal roughened surfaces of the processing chamber. The emitted radiation may be derived from the plasma within the chamber, or alternatively, an external energy source. In detecting and analyzing the radiation reflected off the internal surfaces of the processing tool, the instant method and system monitors the deposition process of the film and automatically controls the deposition of such film in response to the measurements taken.