Abstract: Systems and methods for dynamic slurry blending and control are described. A method comprises applying a slurry to a wafer during a polishing process, detecting a wafer property during the polishing process, and changing a slurry property during the polishing process based, at least in part, upon the detected wafer property. In another embodiment, a system comprises a slurry mixer, a polisher coupled to the slurry mixer via a slurry feeder, the polisher being configured to receive a slurry from the slurry mixer via the slurry feeder and to apply the slurry to a wafer during a polishing process, and a computer coupled to the slurry mixer and to the polisher, the computer being configured to receive a signal indicative of a detected wafer property and to control the slurry mixer to change a slurry property during the polishing process based, at least in part, upon the detected wafer property.

Abstract: Buffered slurries are used in a semiconductor process for chemical mechanical polishing of metal layers, such as aluminum or titanium. The slurries may comprise an oxidant capable of causing a passive oxide film to form on a metal based layer. The oxidant may comprise a diluent and may be optionally formulated with a separate oxidizing agent, such as ammonium peroxydisulfate. The slurries may include a buffer that maintains a slurry pH where the passive metal oxide film is stable. This pH may be between about 4 and about 9.

Abstract: Chemical mechanical polishing slurry characteristics, such as oxidant concentration and abrasive particle dispersion, are determined using electrochemical measurement techniques, such as chronoamperometry, amperometry, chronopotentiometry, ionic conductivity, or linear sweep potentiometry. Slurry characteristics may be tested and monitored independent of a CMP polishing tool. Slurry characteristics may also be automatically controlled in an on-line chemical mechanical polishing process using electrochemical measurements.

Abstract: There is described a slurry for use in chemical mechanical polishing of copper layers in integrated circuit fabrication. The slurry includes a chromate oxidant, such as sodium chromate tetrahydrate (Na.sub.2 CrO.sub.4.4H.sub.2 O). The chromate oxidant provides a slightly basic slurry solution that enhances removal characteristics for copper layers. In one embodiment, the slurry has a pH between about 6 and about 9.

Abstract: A feedback control system for providing automated control of multi-component chemical concentrations in a hydrogen peroxide/ammonia (SC-1) aqueous bath or in a hydrogen peroxide/hydrochloric (SC-2) aqueous bath used for semiconductor processing. A sample from the liquid bath is routed to two sensors. Three separate schemes for determining concentrations of the two chemicals in the bath are provided by the selection of one of three separate pairs of sensors. A processor is used to monitor and control the chemical makeup of the bath.

Abstract: A feedback control system for providing automated and in-situ control of multi-component chemical concentrations in a liquid bath used for semiconductor processing. A sample from the liquid bath is injected into a carrier stream and routed to a conductivity detector and to an amperometric detector. Hydrogen peroxide concentration levels, as well as acidic or basic component concentration levels, are monitored and the measured readings are sent to a processor. If the concentration levels are not within tolerance for a given process, the processor meters in an appropriate amount of a needed chemical or diluting agent in order to bring the bath to an appropriate chemical concentration level. Additional detectors are employed in order to provide other types of analyses of the chemicals or contaminants present in the liquid bath and the amperometric detection need not be necessarily limited to H.sub.2 O.sub.2.

Abstract: A solid aqueous electrolyte for use in an electrochemical device produced by the process comprising the steps of:forming a homogeneous mixture of an ionically conductive material, water and a radiation curable material, said radiation curable material being capable of crosslinking upon exposure to radition or heat; andsubjecting said mixture to ionizing radiation or heat to thereby crosslink said curable material and an electrochemical cell including the electrolyte are disclosed.

Abstract: A method of measuring the phosphorus concentration in phosphosilicate and borophosphosilicate films using infrared spectroscopy in conjuction with derivative spectroscopic techniques. This method is easily adapted for use with a Fourier Transform spectrometer. A spectrum of the film is taken with a dual beam infrared spectrometer. The second derivative of the spectrum is plotted to rersolve close peaks. Amplitudes of the P.dbd.O band at 1316 cm.sup.-1 and the O--Si--O band at 818 cm.sup.-1 are measured. A ratio between these amplitudes is calculated. The ratio is then matched to a calibration curve to determine the phosphorus concentration.

Abstract: A pelletized, thermally activated, lightweight power source composed of a lithium alloy solid anode, a transition metal chloride-graphite solid cathode and an alkali metal tetrachloroaluminate solid state electrolyte positioned between and in contact with said anode and cathode.

Abstract: A method for preparing alkyl pyridinium chlorides by effecting a direct reaction between the corresponding alkyl chloride and pyridine.