Patents by Inventor Ronald A. DellaGuardia
Ronald A. DellaGuardia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7598169Abstract: A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.Type: GrantFiled: February 21, 2007Date of Patent: October 6, 2009Assignee: International Business Machines CorporationInventors: Qinghuang Lin, Elbert E. Huang, Christy S. Tyberg, Ronald A. DellaGuardia
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Patent number: 7514361Abstract: A method of creating metal caps on copper lines within an inter-line dielectric (ILD) deposits a thin (e.g., 5 nm) metal blanket film (e.g., Ta/TaN) on top the copper lines and dielectric, after the wafer has been planarized. Further a thin dielectric cap is formed over the metal blanket film. A photoresist coating is deposited over the thin dielectric cap and a lithographic exposure process is performed, but without a lithographic mask. A mask is not needed in this situation, because due to the reflectivity difference between copper and the ILD lying under the two thin layers, a mask pattern is automatically formed for etching away the Ta/TaN metal cap between copper lines. Thus, this mask pattern is self-aligned above the copper lines.Type: GrantFiled: August 20, 2007Date of Patent: April 7, 2009Assignee: International Business Machines CorporationInventors: Griselda Bonilla, Shyng-Tsong Chen, Matthew E. Colburn, Ronald DellaGuardia, Chih-Chao Yang
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Publication number: 20090053890Abstract: A method of creating metal caps on copper lines within an inter-line dielectric (ILD) deposits a thin (e.g., 5 nm) metal blanket film (e.g., Ta/TaN) on top the copper lines and dielectric, after the wafer has been planarized. Further a thin dielectric cap is formed over the metal blanket film. A photoresist coating is deposited over the thin dielectric cap and a lithographic exposure process is performed, but without a lithographic mask. A mask is not needed in this situation, because due to the reflectivity difference between copper and the ILD lying under the two thin layers, a mask pattern is automatically formed for etching away the Ta/TaN metal cap between copper lines. Thus, this mask pattern is self-aligned above the copper lines.Type: ApplicationFiled: August 20, 2007Publication date: February 26, 2009Inventors: Griselda Bonilla, Shyng-Tsong Chen, Matthew E. Colburn, Ronald DellaGuardia, Chih-Chao Yang
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PROVIDING GAPS IN CAPPING LAYER TO REDUCE TENSILE STRESS FOR BEOL FABRICATION OF INTEGRATED CIRCUITS
Publication number: 20080315347Abstract: Fabricating an integrated circuit using a cap layer that includes one or more gaps or voids. The gaps or voids are provided prior to performing deposition and cure for an inter-layer dielectric (ILD) layer adjoining the cap layer. The gaps or voids reduce and prevent tensile stress buildup by allowing for stress relaxation, hence preventing catastrophic failure of the integrated circuit.Type: ApplicationFiled: June 25, 2007Publication date: December 25, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Griselda Bonilla, Shyng-Tsong Chen, Ronald A. DellaGuardia, Qinghuang Lin, Kelly Malone, Shom S. Ponoth, Chih-Chao Yang -
Publication number: 20080200034Abstract: A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.Type: ApplicationFiled: February 21, 2007Publication date: August 21, 2008Inventors: Qinghuang Lin, Elbert E. Huang, Christy S. Tyberg, Ronald A. DellaGuardia
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Patent number: 7253100Abstract: Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.Type: GrantFiled: November 17, 2005Date of Patent: August 7, 2007Assignee: International Business Machines CorporationInventors: Ronald A. DellaGuardia, Daniel C. Edelstein, Habib Hichri, Vincent J. McGahay
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Publication number: 20070166648Abstract: A method and structure for an integrated via and line lithography followed by integrated via and line etch. A two-layered, negative resist based lithography is used to generate a dual damascene structure in the photoresist which is subsequently transferred into the underlying ILD using an lithography with an integrated RIE. A method is also provided to correct any misalignment between the via and trench during photolithography steps which would reduce the size of the via opening and impact the via resistance.Type: ApplicationFiled: January 17, 2006Publication date: July 19, 2007Applicant: International Business Machines CorporationInventors: Shom Ponoth, William America, Timothy Brunner, Ronald DellaGuardia, Kaushal Patel
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Publication number: 20070111466Abstract: Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.Type: ApplicationFiled: November 17, 2005Publication date: May 17, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ronald DellaGuardia, Daniel Edelstein, Habib Hichri, Vincent McGahay
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Patent number: 7214603Abstract: Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.Type: GrantFiled: June 1, 2005Date of Patent: May 8, 2007Assignee: International Business Machines CorporationInventors: Ronald Dellaguardia, Elbert Huang, Qinghuang Lin, Robert Miller
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Publication number: 20060183314Abstract: Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.Type: ApplicationFiled: June 1, 2005Publication date: August 17, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ronald Dellaguardia, Elbert Huang, Qinghuang Lin, Robert Miller
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Patent number: 6303263Abstract: The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.Type: GrantFiled: February 25, 1998Date of Patent: October 16, 2001Assignee: International Business Machines MachinesInventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Qinghuang Lin
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Patent number: 6268436Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.Type: GrantFiled: December 27, 1999Date of Patent: July 31, 2001Assignee: International Business Machines CorporationInventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Quighuang Lin
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Patent number: 6207353Abstract: A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer.Type: GrantFiled: December 10, 1997Date of Patent: March 27, 2001Assignee: International Business Machines CorporationInventors: Michael D. Armacost, Willard E. Conley, Tina J. Cotler-Wagner, Ronald A. DellaGuardia, David M. Dobuzinsky, Michael L. Passow, William C. Wille
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Patent number: 6203965Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.Type: GrantFiled: April 19, 2000Date of Patent: March 20, 2001Assignees: Shipley Company, L.L.C., IBM CorporationInventors: James F. Cameron, James Michael Mori, George W. Orsula, James W. Thackeray, Wu-Song Huang, Ronald A. DellaGuardia, Kuang-Jung Chen, Hiroshi Ito, Wayne M. Moreau
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Patent number: 6103447Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.Type: GrantFiled: February 25, 1998Date of Patent: August 15, 2000Assignee: International Business Machines Corp.Inventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Qinghuang Lin
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Patent number: 6074800Abstract: Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate.Type: GrantFiled: April 23, 1998Date of Patent: June 13, 2000Assignee: International Business Machines CorporationInventors: Gregory Breyta, Phillip J. Brock, Daniel J. Dawson, Ronald A. DellaGuardia, Charlotte R. DeWan, Andrew R. Eckert, Hiroshi Ito, Premlatha Jagannathan, Leo L. Linehan, Kathleen H. Martinek, Wayne M. Moreau, Randolph J. Smith
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Patent number: 6042997Abstract: The present invention provides novel copolymers and photoresist compositions that contain such copolymers as a resin binder component. Preferred copolymers include three distinct repeating units: 1) units that contain acid-labile groups; 2) units that are free of both reactive and hydroxy moieties; and 3) units that contribute to aqueous developability of a photoresist containing the copolymer as a resin binder. Photoresists of the invention exhibit surprising lithographic improvements including substantially enhanced plasma etch resistance and isolated line performance as well as good dissolution rate control.Type: GrantFiled: January 23, 1998Date of Patent: March 28, 2000Assignees: IBM Corporation, Shipley Company, L.L.C.Inventors: George G Barclay, Michael F. Cronin, Ronald A. Dellaguardia, James W. Thackeray, Hiroshi Ito, Greg Breyta
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Patent number: 5861231Abstract: The present invention provides novel copolymers and photoresist compositions that contain such copolymers as a resin binder component. Preferred copolymers include three distinct repeating units: 1) units that contain acid-labile groups; 2) units that are free of both reactive and hydroxy moieties; and 3) units that contribute to aqueous developability of a photoresist containing the copolymer as a resin binder. Photoresists of the invention exhibit surprising lithographic improvements including substantially enhanced plasma etch resistance and isolated line performance as well as good dissolution rate control.Type: GrantFiled: June 11, 1996Date of Patent: January 19, 1999Assignees: Shipley Company, L.L.C., IBM CorporationInventors: George G. Barclay, Michael F. Cronin, Ronald A. Dellaguardia, James W. Thackeray, Hiroshi Ito, Greg Breyta
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Patent number: 5264328Abstract: The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.Type: GrantFiled: April 24, 1992Date of Patent: November 23, 1993Assignee: International Business Machines CorporationInventors: Ronald A. DellaGuardia, John L. Mauer, IV, David E. Seeger