Abstract: A continuity testing and cleaning fixture includes a continuity test area disposed on a portion of a first surface of the fixture, wherein the continuity test area comprises an upper region comprising at least 99.99 wt % tungsten. The continuity testing and cleaning fixture may be used in a method involving contacting at least two conductive elements of a probe card with a continuity test area of a continuity testing and cleaning fixture, wherein the continuity test area comprises an upper region comprising at least 99.99 wt % tungsten; determining an electrical resistance between the at least two conductive elements; and cleaning the at least two conductive elements with at least one cleaning zone of the continuity testing and cleaning fixture in response to determining the electrical resistance to be above a first threshold.

Abstract: A continuity testing and cleaning fixture includes a continuity test area disposed on a portion of a first surface of the fixture, wherein the continuity test area comprises an upper region comprising at least 99.99 wt % tungsten. The continuity testing and cleaning fixture may be used in a method involving contacting at least two conductive elements of a probe card with a continuity test area of a continuity testing and cleaning fixture, wherein the continuity test area comprises an upper region comprising at least 99.99 wt % tungsten; determining an electrical resistance between the at least two conductive elements; and cleaning the at least two conductive elements with at least one cleaning zone of the continuity testing and cleaning fixture in response to determining the electrical resistance to be above a first threshold.

Abstract: A vertical probe tip rotational scrub and method is described. The vertical probe includes a wafer prober chuck; a wafer positioned on the wafer prober chuck; and at least one probe having a probe tip, the at least one probe tip rotatably mounted such that the probe tip provides a rotational scrub on a surface of a wafer surface. A method for wafer probing is also described, the method includes: determining a vertical location of a wafer surface relative to at least one probe having a probe tip; retracting the probe tip; and imparting an upward motion on the at least one probe in response to the retracting of the probe tip, wherein the upward motion results in a rotational scrub of the wafer surface.

Abstract: Apparatus for the method, including cartridges for housing strips of cleaning pad material, are provided. A method for cleaning probe tips, e.g., on a probe card, comprises abrading the probe tips on an abrasive surface, and advancing the abrasive surface so that a later cleaning cycle uses a clean portion of the cleaning pad. The method may include use of a vacuum to aspirate material dislodged by the abrading. In another aspect, a method for cleaning probe tips includes brushing the probe tips and operating a vacuum to aspirate material from the probe tips and/or brush. The methods may be used singly or in combination.

Abstract: Apparatus for the method, including cartridges for housing strips of cleaning pad material, are provided. A method for cleaning probe tips, e.g., on a probe card, comprises abrading the probe tips on an abrasive surface, and advancing the abrasive surface so that a later cleaning cycle uses a clean portion of the cleaning pad. The method may include use of a vacuum to aspirate material dislodged by the abrading. In another aspect, a method for cleaning probe tips includes brushing the probe tips and operating a vacuum to aspirate material from the probe tips and/or brush. The methods may be used singly or in combination.