Abstract: An E-beam lithography process for forming via holes in insulating layers, such as quartz, on semiconductor devices. Where quartz is used, an underlayer of an adhesion promoter is used (e.g. KMR resist which is desensitized by heating) followed by overcoating with an E-beam sensitive positive image resist layer of the novolak/diazobenzophenone family. After exposure with an E-beam the development is performed at low temperatures (e.g. 14.degree. C.) with end-point detection to indicate a further degree of overdevelopment, followed by controlled heating to post-bake of the image resist to obtain round and properly tapered via holes.