Abstract: A topical composition comprising at least one extract from the Anogeissus genus and at least one DNA repair enzyme and a method for treating human skin for improvement comprising applying to the skin a topical composition comprising at least one extract from the Anogeissus genus and at least one DNA repair enzyme.

Abstract: The present invention generally relates to the field of pharmaceutical sciences. More specifically, the present invention includes apparatus and devices for the preparation of pharmaceutical formulations containing large diameter synthetic membrane vesicles, such as multivesicular liposomes, methods for preparing such formulations, and the use of specific formulations for therapeutic treatment of subjects in need thereof. Formation and use of the pharmaceutical formulations containing large diameter synthetic membrane vesicles produced by using the apparatus and devices for therapeutic treatment of subjects in need thereof is also contemplated.

Abstract: A topical composition comprising an ingredient that is obtained by fermentation of Raphanus Sativus roots by the organism Leuconostoc or Lactobacillus.

Abstract: A method is provided for use of a concrete composition and an associated apparatus. The method provides for mixing of the concrete material, accelerant powder and, optionally, an associated substance to enable the controlled hardening of the concrete material in a monolithic structure. The apparatus can dispose a slip-plane film to facilitate a relatively continuous process.

Abstract: An etch apparatus. The etch apparatus includes a tank coupled to a recirculating path that includes a dissolver. The dissolver includes a porous carbon matrix filter coated with silicon nitride. An etchant from the tank circulates through the recirculating path and performs a selective etching of a structure in the tank in contact with the etchant. The structure includes silicon nitride on a pad layer that includes silicon dioxide. The selective etching is characterized by the silicon nitride on the pad layer being selectively etched by the etchant relative to an etching by the etchant of the silicon dioxide. The etch apparatus further includes: means for dissolving the silicon nitride coated on the filter into the etchant at a controlled dissolution rate sufficient to cause the selective etching; and means for coating the silicon nitride onto the filter to facilitate the selective etching.

Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

Abstract: A composting floor system is disclosed for accelerated and uniform decomposition of organic matter, the composting floor system including a gas delivery system, wherein the floor system facilitates drainage and collection of leachate generated during the composting process, and a collection of leachate and an efficiency and speed of aerobic composting are maximized.

Abstract: A method is provided for use of a concrete composition and an associated apparatus. The method provides for mixing of the concrete material, accelerant powder and, optionally, an associated substance to enable the controlled hardening of the concrete material in a monolithic structure. The apparatus can dispose a slip-plane film to facilitate a relatively continuous process.

Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

Abstract: A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer.

Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

Abstract: A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer.

Abstract: A percussion instrument mounting system comprising a connector means preferably and elastically flexible cord or plurality of cords, each having a first end attached to a percussion instrument such as a woodblock, and a second end attaching to a vibration absorbing material or to a rigid frame or support upon which the vibration absorbing material rests or is thereby supported. The elastic cord draws the percussion woodblock and the vibration absorbing material together into a flexibly fixed position so that the instrument is playable.

Abstract: A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer.

Abstract: A method is provided for use of a concrete composition and an associated apparatus. The method provides for mixing of the concrete material, accelerant powder and, optionally, an associated substance to enable the controlled hardening of the concrete material in a monolithic structure. The apparatus can dispose a slip-plane film to facilitate a relatively continuous process.

Abstract: A percussion instrument mounting system comprising a connector means preferably and elastically flexible cord or plurality of cords, each having a first end attached to a percussion instrument such as a woodblock, and a second end attaching to a vibration absorbing material or to a rigid frame or support upon which the vibration absorbing material rests or is thereby supported. The elastic cord draws the percussion woodblock and the vibration absorbing material together into a flexibly fixed position so that the instrument is playable.

Abstract: A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.

Abstract: A method for detecting physical interference with desired transport of an article. The method includes the step of detecting an operative acoustic signal representing the structure-borne sound pattern of an article during said article transport, and detecting the presence of interference based on the acoustic signal. A system for performing the method includes a transport device adapted to transport the article through a predetermined path and an acoustic sensor in structure-borne acoustic contact with the transport device and capable of producing an acoustic signal indicative of physical interference.

Abstract: A process for treating a workpiece. The workpiece is cooled by directing toward the workpiece a material that includes a gas and particles of a material that undergoes a phase change when applied to the workpiece. The gas and the particle material are non-reactive with the workpiece during the cooling.

Abstract: A sputtering apparatus using a collimator disposed between a wafer holder for holding a wafer and a target to intercept some of the particles ejected from the target, wherein the collimator is movable in a direction parallel to the wafer surface in a manner permitting the collimator to be cleaned and maintained in situ simultaneous with sputtering deposition processing.