Patents by Inventor Ronald Arif
Ronald Arif has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9349910Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.Type: GrantFiled: January 30, 2014Date of Patent: May 24, 2016Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee, Hongping Zhao
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Patent number: 8907321Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.Type: GrantFiled: December 14, 2010Date of Patent: December 9, 2014Assignee: Lehigh UniveristyInventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
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Publication number: 20140191189Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.Type: ApplicationFiled: January 30, 2014Publication date: July 10, 2014Applicant: LEHIGH UNIVERSITYInventors: Nelson TANSU, Ronald A. ARIF, Yik Khoon EE, Hongping ZHAO
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Patent number: 8659005Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing a step function In-content profile.Type: GrantFiled: December 24, 2007Date of Patent: February 25, 2014Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee, Hongping Zhao
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Patent number: 8076667Abstract: A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO2 microspheres onto the polystyrene microspheres; and heal treating to convert the polystyrene microspheres into a planar microlayer film to provide a surface comprising substantially two-dimensional (2D) hexagonal close-packed SIO2 colloidal microsphere crystals partially imposed into a polystyrene monolayer film.Type: GrantFiled: December 24, 2007Date of Patent: December 13, 2011Assignee: Lehigh UniversityInventors: Nelson Tansu, Yik Khoon Ee, James F. Gilchrist, Pisit Kumnorkaew, Ronald A. Arif
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Patent number: 8030641Abstract: A gallium nitride-based device has ? first GaN layer and ? type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises ? graded molar In concentration.Type: GrantFiled: December 19, 2007Date of Patent: October 4, 2011Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Publication number: 20110147702Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.Type: ApplicationFiled: December 14, 2010Publication date: June 23, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
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Publication number: 20100327783Abstract: A light emitting device comprising a staggered composition quantum well.Type: ApplicationFiled: December 24, 2007Publication date: December 30, 2010Applicant: LEHIGH UNIVERSITYInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee, Hongping Zhao
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Patent number: 7842531Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.Type: GrantFiled: March 5, 2009Date of Patent: November 30, 2010Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Publication number: 20090315013Abstract: A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO2 microspheres onto the polystyrene microspheres; and heal treating to convert the polystyrene microspheres into a planar microlayer film to provide a surface comprising substantially two-dimensional (2D) hexagonal close-packed S1O2 colloidal microsphere crystals partially imposed into a polystyrene monolayer film.Type: ApplicationFiled: December 24, 2007Publication date: December 24, 2009Applicant: LEHIGH UNIVERSITYInventors: Nelson Tansu, Yik Khoon Ee, James F. Gilchrist, Pisit Kumnorkaew, Ronald A. Arif
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Publication number: 20090162963Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.Type: ApplicationFiled: March 5, 2009Publication date: June 25, 2009Applicant: LEHIGH UNIVERSITYInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Patent number: 7518139Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.Type: GrantFiled: October 31, 2006Date of Patent: April 14, 2009Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Publication number: 20080144685Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises a graded molar In concentration.Type: ApplicationFiled: December 19, 2007Publication date: June 19, 2008Inventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Publication number: 20080099755Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.Type: ApplicationFiled: October 31, 2006Publication date: May 1, 2008Applicant: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee