Patents by Inventor Ronald B. Foster

Ronald B. Foster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170041540
    Abstract: Energy is optimized in a battery-powered camera system by co-locating a low-power vision processor with a camera. The vision processor executes algorithms to determine whether the image contains one or more objects of interest. Convolutional neural network is one example of an object detection algorithm. Energy is saved by making local decisions to turn off the camera for one or more subsequent frames, and by avoiding energy expenditure for compression and transmission. Security is optimized by transmitting only information about the images, as opposed to images themselves. Alternatively, security may be enhanced by completing a first portion of an object detection algorithm on a local processor, then transmitting interim data to a remote computer where a second portion of the algorithm is completed. It is challenging to obtain original image data from transmitted interim data.
    Type: Application
    Filed: August 3, 2016
    Publication date: February 9, 2017
    Inventors: Ronald B Foster, Scott Gardner, Parviz Palangpour
  • Publication number: 20040253496
    Abstract: Disclosed is a Proton exchange Membrane (PEM) fuel cell Membrane Electrode Assembly (MEA) apparatus constructed on a planar substrate. The substrate provides mechanical support for the MEA and also facilitates the inclusion of further integrated circuitry operably coupled to the MEA. Also disclosed is integrated circuitry providing MEA fuel cells with self-contained control circuitry, as well as integrated circuitry with self-contained fuel cell power sources. The invention also provides increased MEA performance and reduced cost as a result of the reduced thickness of the electrolyte material.
    Type: Application
    Filed: June 30, 2004
    Publication date: December 16, 2004
    Inventor: Ronald B. Foster
  • Publication number: 20030096146
    Abstract: Disclosed is a Polymer Electrolyte Membrane (PEM) fuel cell Membrane Electrode Assembly (MEA) apparatus constructed on a planar substrate. The substrate provides mechanical support for the MEA and also facilitates the inclusion of further integrated circuitry operably coupled to the MEA. Also disclosed is integrated circuitry providing MEA fuel cells with self-contained control circuitry, as well as integrated circuitry with self-contained fuel cell power sources. The invention also provides increased MEA performance and reduced cost as a result of the reduced thickness of the electrolyte material.
    Type: Application
    Filed: March 30, 2001
    Publication date: May 22, 2003
    Inventor: Ronald B. Foster
  • Patent number: 6500577
    Abstract: Disclosed is a polymer electrolyte membrane (PEM) fuel cell assembly apparatus for receiving an inserted membrane electrode assembly (MEA). The apparatus includes modular features for connecting a plurality of fuel cells into a planar fuel cell “stack” capable of using ambient air to supply oxidant gas and dissipate heat and water vapor. The invention also facilitates convenient removal and replacement of individual cells or MEAs in a stack without disassembly of the entire stack.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: December 31, 2002
    Inventor: Ronald B. Foster
  • Publication number: 20020081474
    Abstract: Disclosed is a polymer electrolyte membrane (PEM) fuel cell assembly apparatus for receiving an inserted membrane electrode assembly (MEA). The apparatus includes modular features for connecting a plurality of fuel cells into a planar fuel cell “stack” capable of using ambient air to supply oxidant gas and dissipate heat and water vapor. The invention also facilitates convenient removal and replacement of individual cells or MEAs in a stack without disassembly of the entire stack.
    Type: Application
    Filed: December 26, 2000
    Publication date: June 27, 2002
    Inventor: Ronald B. Foster
  • Patent number: 5130760
    Abstract: A semiconductor device is provided for use as a bidirectional surge suppressor circuit. It incorporates doped regions of substrate and epitaxial layers which result in a dual Zener diode arrangement having the Zener diodes associated in an opposite polarity arrangement. The semiconductor device comprises a substrate with an epitaxial layer deposited on one of its surfaces. In an upper surface of the epitaxial layer, first and second regions of P type material are diffused with guard rings comprising P+ type material diffused around the first and second regions. The guard rings are heavily doped and extend much deeper than the relatively shallow junctions of P material. A channel stopper of N+ conductivity type material is diffused into the upper surface of the epitaxial layer to provide a channel stopper, or sinker, around both the first and second regions and their associated guard rings and, additionally, between the first and second regions.
    Type: Grant
    Filed: June 11, 1991
    Date of Patent: July 14, 1992
    Assignee: Honeywell Inc.
    Inventors: Walter T. Matzen, Ronald B. Foster
  • Patent number: 4952904
    Abstract: The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.
    Type: Grant
    Filed: December 23, 1988
    Date of Patent: August 28, 1990
    Assignee: Honeywell Inc.
    Inventors: Robert G. Johnson, James O. Holmen, Ronald B. Foster, Uppili Sridhar
  • Patent number: 4507851
    Abstract: Disclosed is a process for depositing a metal film on a silicon oxide or silicon nitride surface. This process provides an extremely adherent metallic film and is resistant to interdiffusion between the semiconductor, the insulator, and the metal. The process includes forming contact openings through an insulating layer to a silicon substrate; sputter etching the insulating layer and exposed substrate; depositing layers of platinum, a barrier metal and a conducting metal; and heating to form platinum silicide in the contact openings. The process is useful in forming an electrical interconnection system on a semiconductor device.
    Type: Grant
    Filed: April 30, 1982
    Date of Patent: April 2, 1985
    Assignee: Texas Instruments Incorporated
    Inventors: Keith A. Joyner, Ronald B. Foster