Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract: Deposition systems include a reaction chamber, at least one thermal radiation emitter for heating matter within the reaction chamber, and at least one metrology device for detecting and/or measuring a characteristic of a workpiece substrate in situ within the reaction chamber. One or more chamber walls may be transparent to the thermal radiation and to radiation signals to be received by the metrology device, so as to allow the radiation to pass into and out from the reaction chamber, respectively. At least one volume of opaque material is located to shield a sensor of the metrology device from at least some of the thermal radiation. Methods of forming a deposition system include providing such a volume of opaque material at a location shielding the sensor from the thermal radiation. Methods of using a deposition system include shielding the sensor from at least some of the thermal radiation.

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract: Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

Abstract: Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).

Abstract: Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

Abstract: A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

Abstract: A method and apparatus for removing contaminants from a fluid are disclosed. The fluid is introduced into a decontamination chamber such that the fluid is cooled and contaminants fall out within the decontamination chamber, producing a purified fluid. The purified fluid is then retrieved and can be used in a supercritical processing system.