Abstract: An improved process for forming titanium silicide layers on semiconductor device silicon regions which have native oxide thereon utilizes a reactively sputter deposited layer of TiH.sub.x.ltoreq.2 followed by a rapid thermal anneal in a nitrogen bearing gas. This process results in lowered silicidation activation energy and lower anneal temperature requirements. Production throughput is improved with respect to prior art methods of removing the native oxide or minimizing its negative effect on silicide formation. The same process produces a titanium nitride/titanium silicide bilayer on silicon, and a titanium nitride/titanium bilayer on silicon dioxide. The thickness of the titanium nitride layer over silicon dioxide is enhanced by the use of TiH.sub.x.ltoreq.2 in place of Ti layers used in prior art, thus improving the utility of the titanium nitride as a diffusion barrier layer.