Abstract: An etching apparatus for the selective etching of e.g. single crystal silicon is described. The apparatus includes a tank for receiving a quantity of liquid etchant, the tank being provided with means for injecting oxygen, nitrogen or mixtures thereof into the etchant. Stirrers circulate the etchant around the bath. Gas injection has been found to improve the quality of the etched product and to provide control of the etching process.

Abstract: An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.

Abstract: Aluminum conductor tracks are formed e.g. on a semiconductor body by vapor depositing a layer of aluminum from tri-isobutyl aluminum and then selectively etching the routing. The surface of the semiconductor body is activated in a hydrogen discharge in the presence of a transport metal.

Abstract: A method for the deposition of aluminum on a solid body of pyrolysis of tri-isobutyl aluminum vapor diluted with an inert carrier gas.

Abstract: Silicon semiconductor devices, e.g. integrated circuits are metallized with a silicon/aluminum alloy by exposure to silane and an aluminum alkyl vapour at an elevated temperature and reduced pressure. The process eliminates the prior hydrogen plasma treatment and subsequent annealing of conventional vacuum deposition of aluminum and provides good step and crack coverage.