Abstract: A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.

Abstract: Apparatus for cleaning semiconductor wafers comprises a tank for containing a liquid wherein the liquid has an upper surface. A wafer holder holds the semiconductor wafer in the tank with at least a portion of the semiconductor wafer being immersed in the liquid within the tank. A wafer-moving mechanism is constructed for engaging the semiconductor wafer in the tank to rotate the semiconductor wafer and to reciprocate the semiconductor wafer so that at least a central region of the wafer repeatedly passes through the surface of the liquid. The wafer-moving mechanism comprises first and second surfaces engageable with the semiconductor wafer and rotatable about respective first and second axes of rotation for rotating the wafer.

Abstract: A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Abstract: An apparatus is disclosed for shaping the cross-section of a metal wire or metal ribbon product obtained by slitting metallic coil stock into multiple lengths of wire with an aspect ratio of 1 or ribbon having an aspect ratio of 2 or more. The product obtained from the slitting procedure is marred by the presence of a burr which impairs mechanical properties and consequently must be eliminated. In previous practice, this was achieved by feeding the slit product through the nip of a pair of mating, shaping rolls having a fixed engagement. However, problems arise from run to run when the rolls are in fixed engagement. For example, variations in the thickness of the material being processed presents difficulties with a fixed engagement.In the disclosed apparatus engagement is allowed to vary while the engagement force is held constant. In brief, this is accomplished by mounting the shaping rolls on separate support members with one of the support members being movable to permit the roll engagement to vary.

Abstract: A method is disclosed for shaping the cross-section of a slit product. After slitting the slit product is characterized by a burr formation that is detrimental to the mechanical properties of the product and must be eliminated. The method comprises the steps of positioning in engaging relationship a pair of revolving rolls and feeding the slit product into the rolls at an angle of 7.degree.-30.degree. with the tangent plane of the rolls.