Abstract: A tag memory circuit includes an address index input, an address offset input and an integrated adder and pre-decode circuit. The integrated adder and pre-decode circuit has a first addend input coupled to the address index input, a second addend input coupled to the address offset input, and a pre-decoded sum output. A final row decode and word line driver circuit is coupled to the pre-decoded sum output and generates a word line output which is coupled to the address inputs of a tag memory array. The data outputs of the tag memory array are coupled to a sense amplifier.

Abstract: A self-timed memory control system including a dummy row and column of memory cells along adjacent edges of a core memory array. Control logic receives an external clock signal and initiates address decoding, and also asserts a sense enable signal for activating the sense amplifiers. A dummy driver receives the enable signal and asserts a select signal on a dummy select line, which causes a memory access to occur in the dummy portion simultaneously with each access of the core memory array. A fixed memory cell in the dummy path always asserts a logic zero to a dummy sense amplifier, which senses the logic zero and respondingly asserts a timing signal. The dummy sense amplifier is biased with a voltage offset to favor a logic one, so that the timing signal is preferably delayed until after the output data of the core memory array has stabilized.