Abstract: A process for converting precursor objects into a unitary ceramic object produces, for example, a ceramic, optical scan mirror that is formed from at least two pieces. An optical section has at least one optical surface and at least one attachment surface, and a support section has at least one attachment surface and preferably has a mounting area. The optical and support sections are formed as separate pieces from a precursor material, such as graphite, such that a selected support section can receive any of a plurality of optical sections having different sizes, shapes, or orientations. To form the mirror, the attachment surfaces are placed adjacent each other, and then the sections are converted simultaneously to a ceramic material, such as silicon carbide, to form a monolithic scan mirror.

Abstract: A system conveys two gases separately until controlled delivery and gas mixing are desired. The device maintains separation between the two gases with sealed, high temperature materials, and a geometry that contains gas flow channels that do not allow gas mixing. The present design provides a seal at the interfaces between components. An outer ring and an inner spool are assembled together to form a single component that accommodates the input of two, initially separate gases, and then contains and conveys the two gases separately to an exit surface where outlet holes allow the two gases to mix and react in a controlled manner upon exiting the component. The inlet holes for both gases are located on one side of the spool. The exit holes are formed in a centralized, alternating, completely interspersed array or grid-like pattern on the opposite surface of the spool.

Abstract: An apparatus for holding a plurality of semiconductor wafers during heat treatment of the wafers in a furnace, which apparatus comprises a plurality of support members or rails extending essentially vertically between a top and bottom plate. At least two of the support members are located toward the front of the carrier where the wafers are inserted, and at least one support member is located toward the back of the carrier. A first plurality of slats is attached to one of the front support members and to a back support member such that the space between the top surface of one slat and the bottom surface of the next higher adjacent slat forms a slot for receiving a portion of a semiconductor wafer. A second plurality of slats is attached to another front support member and to a back support member to form corresponding slots on another side of the carrier for receiving another portion of a semiconductor wafer.