Abstract: A method and apparatus for detecting metal extrusion associated with electromigration (EM) under high current density situations within an EM test line by measuring changes in capacitance associated with metal extrusion that occurs in the vicinity of the charge carrying surfaces of one or more capacitors situated in locations of close physical proximity to anticipated sites of metal extrusion on an EM test line are provided. The capacitance of each of the one or more capacitors is measured prior to and then during or after operation of the EM test line so as to detect capacitance changes indicating metal extrusion.

Abstract: A device, system and method for evaluating reliability of a semiconductor chip are disclosed. Strain is determined at a location of interest in a structure. Failures are evaluated in a plurality of the structures after stress cycling to determine a strain threshold with respect to a feature characteristic. Structures on a chip or chips are evaluated based on the feature characteristic to predict reliability based on the strain threshold and the feature characteristic. Predictions and design changes may be made based on the results.

Abstract: A device, system and method for evaluating reliability of a semiconductor chip are disclosed. Strain is determined at a location of interest in a structure. Failures are evaluated in a plurality of the structures after stress cycling to determine a strain threshold with respect to a feature characteristic. Structures on a chip or chips are evaluated based on the feature characteristic to predict reliability based on the strain threshold and the feature characteristic. Predictions and design changes may be made based on the results.

Abstract: A device and method for evaluating reliability of a semiconductor chip structure built by a manufacturing process includes a test structure built in accordance with a manufacturing process. The test structure is thermal cycled and the yield of the test structure is measured. The reliability of the semiconductor chip structure built by the manufacturing process is evaluated based on the yield performance before the thermal cycling.

Abstract: A conductor for interconnecting integrated circuit components having improved reliability. The conductor includes a liner surrounding at least three surfaces of the conductor, producing a low textured conductor. It has been found that low textured conductor results in improved electromigration lifetime.

Abstract: A method for analyzing circuit designs includes discretizing a design representation into pixel elements representative of a structure in the design and determining at least one property for each pixel element representing a portion of the design. Then, a response of the design is determined due to local properties across the design.

Abstract: A reinforced semiconductor interconnect structure, having the following components: (1) A first metal interconnect disposed in a first material, the first metal interconnect having a line portion and at least one via portion, an anode section and a cathode section, the via portion of the first metal interconnect located in the anode section, the line portion of the first metal interconnect having a top, bottom and terminus side, wherein at least a part of the bottom side of the line portion of the first metal interconnect in contact with the first dielectric; and (2) a first reinforcement disposed in the first material, the first reinforcement in contact with at least the bottom side of the first metal interconnect, the first reinforcement comprising a second material, the second material being electrically nonconductive; and wherein the second material has a greater mechanical rigidity than the first material.

Abstract: A reinforced semiconductor interconnect structure, having the following components: