Patents by Inventor Ronald Franklin Marks
Ronald Franklin Marks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6928723Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.Type: GrantFiled: December 23, 2003Date of Patent: August 16, 2005Assignee: International Business Machines CorporationInventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
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Publication number: 20040134060Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.Type: ApplicationFiled: December 23, 2003Publication date: July 15, 2004Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
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Patent number: 6721144Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.Type: GrantFiled: January 4, 2001Date of Patent: April 13, 2004Assignee: International Business Machines CorporationInventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
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Publication number: 20020085321Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.Type: ApplicationFiled: January 4, 2001Publication date: July 4, 2002Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
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Patent number: 6088204Abstract: A magnetoresistive sensor for use as the read sensor in magnetic recording disk drives uses a permalloy (approximate composition of Ni.sub.81,Fe.sub.19) sensor layer with a magnetoresistance coefficient significantly greater than prior art permalloy sensor layers for a range of permalloy film thicknesses. The permalloy film is deposited on a substrate, such as alumina, that is essentially non-reactive with permalloy at elevated temperatures while the substrate is heated. The permalloy films have a zero or slightly negative magnetostriction, low easy and hard axis coercivities, and a low anisotropy field. At very small film thicknesses the permalloy films formed with substrate heating exhibit an even greater percentage increase in magnetoresistance coefficient than at higher film thicknesses, thereby allowing the films to function in magnetic recording disk drive heads for use at very high linear recording densities.Type: GrantFiled: December 1, 1994Date of Patent: July 11, 2000Assignee: International Business Machines CorporationInventors: Robin Frederick Charles Farrow, Ronald Franklin Marks, Daniele Mauri, Stuart Stephen Papworth Parkin
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Patent number: 6015632Abstract: A magnetoresistive sensor based on a giant magnetoresistance multilayer uses a multilayer structure formed of alternating layers or stripes of ferromagnetic and nonferromagnetic metal that are spontaneously formed or "self-assembled" laterally on a special template layer. The template layer is a crystalline structure that has a two-fold uniaxial surface, i.e., one that is structurally invariant for a rotation by 180 degrees (and only 180 degrees) about an axis (the symmetry axis) perpendicular to the surface plane. Such a template layer is the (110) surface plane of body-centered-cubic Mo. The alternating stripes of ferromagnetic metal (such as Co or Fe) and nonferromagnetic metal (such as Ag) become spontaneously arranged laterally on the template layer during co-deposition, such as during ultrahigh vaccum evaporation, and are aligned so that the direction of composition modulation, i.e.Type: GrantFiled: October 9, 1997Date of Patent: January 18, 2000Assignee: International Business Machines CorporationInventors: David Darden Chambliss, Robin Frederick Charles Farrow, Ronald Franklin Marks, Eric Dean Tober
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Patent number: 5858455Abstract: A method for forming a magnetoresistive sensor results in the spontaneous formation or "self-assembly" of a giant magnetoresistance multilayer structure of alternating stripes of ferromagnetic and nonferromagnetic metal that are stacked laterally on a special template layer. The template layer is a crystalline structure that has a two-fold uniaxial surface, i.e., one that is structurally invariant for a rotation by 180 degrees (and only 180 degrees) about an axis (the symmetry axis) perpendicular to the surface plane. Such a template layer is the (110) surface plane of body-centered-cubic Mo. The alternating stripes of ferromagnetic metal (such as Co or Fe) and nonferromagnetic metal (such as Ag) become spontaneously arranged laterally on the template layer during co-deposition, such as during ultrahigh vaccum evaporation, and are aligned so that the direction of compostion modulation, i.e.Type: GrantFiled: October 9, 1997Date of Patent: January 12, 1999Assignee: International Business Machines CorporationInventors: David Darden Chambliss, Robin Frederick Charles Farrow, Ronald Franklin Marks, Eric Dean Tober
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Patent number: 5792510Abstract: A method for forming a chemically-ordered ferromagnetic or antiferromagnetic metal alloy film allows the temperature and/or time required for annealing to be reduced. The ferromagnetic or antiferromagnetic metal alloy film is dosed with hydrogen either during or subsequent to deposition of the film on a substrate. The metal alloy film is then heated to desorb the hydrogen atoms from the metal alloy. In one embodiment for dosing the metal alloy film with hydrogen a transition metal of the type that catalyzes the dissociative chemisorption of H.sub.2, such as palladium (Pd), is deposited as a film in contact with the metal alloy film. The Pd film is then heated and while at an elevated temperature, it is exposed to H.sub.2 gas. The H.sub.2 becomes dissociated into hydrogen atoms and the hydrogen atoms become chemically absorbed by the Pd film. During subsequent cooling of the Pd film hydrogen atoms in the Pd film become absorbed into the metal alloy film.Type: GrantFiled: June 10, 1997Date of Patent: August 11, 1998Assignee: International Business Machines CorporationInventors: Robin Frederick Charles Farrow, Ronald Franklin Marks
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Patent number: 5699082Abstract: A pointing system for controlling a cursor on a computer display device includes a single control actuator that ordinarily controls movement of the cursor on the display device and also detects if an applied cursor force matches a predetermined tap signature. If the applied force substantially matches the predetermined tap signature, then the system responds to the applied force by initiating one or more display actions rather than by moving the display cursor. The system detects tap signature forces applied along the x, y, and z axes of the control actuator and responds by retrieving a cursor context comprising a window display and corresponding cursor location from a queue and opening the associated window. That is, the system changes the active window from among windows of a graphical user interface, preserving the cursor position within each window. Other tap signature responses can correspond to functions initiated by programmable function keys or to user-defined functions.Type: GrantFiled: June 7, 1995Date of Patent: December 16, 1997Assignee: International Business Machines CorporationInventors: Ronald Franklin Marks, Edwin Joseph Selker