Abstract: A broad-band phase-shifter comprises at least one selector switch and one elementary phase-shifter with two parallel channels, each comprising n “all-pass” cells. The selector switch routes the input signal (E) to either of the channels, each cell phase-shifting a signal according to a law as a function of its frequency, the phase shift &Dgr;&phgr; produced by an elementary phase-shifter being obtained by switching the signal from one channel to the other. The device can be applied especially in electronically scanned antennas.

Abstract: A hyperfrequency semiconductor device having external beam-lead connectors is provided with a capacitance connected in series with the inductance produced by said beam-leads, said capacitance being integrated in at least one of the latter and its value being so selected that at operating frequency of the device said capacitance compensates said inductance.

Abstract: A slot-line for a microwave device in which is mounted at least one diode connected in parallel between two metallic strips of the slot. At high frequencies (18 to 200 GHz), the inductance L of the diode connections presents a not-negligible impedance which makes it difficult to use the diode. The device in accordance with the invention comprises a slot-line reentrant circuit which provides compensation for the diode inductance and is constituted by a metallic section which is coplanar with the line and connected in series with the diode. The compensating section is short-circuited or open-circuited with respect to the metallic strip in which it is reentrant. The electrical length of the compensating section is adjustable by means of wire, conductive varnish or metal pads.