Patents by Inventor Ronald G. Pratt

Ronald G. Pratt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth of single crystal bismuth silicon oxide
    Patent number: 4187139
    Abstract: Method of growing single crystal of bismuth silicon oxide from a melt of Bi.sub.x Si O.sub.1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.
    Type: Grant
    Filed: June 10, 1977
    Date of Patent: February 5, 1980
    Assignee: U.S. Philips Corporation
    Inventors: John C. Brice, Owen F. Hill, Ronald G. Pratt