Abstract: Radiation-induced effects discovered in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices includes a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation.

Abstract: A structure of alternating layers of titanium and an insulator or semiconductor material has temperature-sensitive electrical resistivity. In combination with a resistance-measuring circuit, such structure can serve as an accurate temperature sensor. And, since electrical resistivity is inversely related to temperature, disclosed structures can serve as miniature thermistors in integrated circuit devices.

Abstract: Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effectively serve to minimize interdiffusion during device manufacture without undue increase in electrical contact resistance during device operation.

Abstract: Permanent magnet materials such as Al-Ni-Co-Fe, Mo-Co-Fe, and Co-Cr-Fe alloys comprise cobalt which has become increasingly expensive. Mn-Al is a cobalt-free magnet alloy which, according to the invention, is used to produce isotropic magnets having a maximum energy product of at least 1 million gauss-oersted. Magnets are produced by rapid quenching from a melt, e.g., by splat cooling, melt extraction, or helium blast cooling, followed by a magnetic aging heat treatment. Magnetic particles such as, e.g., fiber sections are bonded, bundled, or encased to form a magnet having desired shape.