Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: An integrated circuit resides on a circuit board. During operation, the digital controller integrated circuit produces control signals to control a power supply for delivery of power to a load. The integrated circuit can include multiple connectivity ports, on-board memory, and mode control logic. The multiple connectivity ports such as pins, pads, etc., of the integrated circuit can be configured to provide connections between internal circuitry residing in the integrated circuit and external circuitry residing on a circuit board to which the integrated circuit is attached. The mode control logic monitors a status of one or more connectivity ports of the integrated circuit to detect when a board handler places the digital controller in a power island mode in which the integrated circuit is powered so that the board handler can access (e.g., read/write) the memory in the digital controller integrated circuit while other portions of the board are unpowered.

Abstract: An integrated circuit resides on a circuit board. During operation, the digital controller integrated circuit produces control signals to control a power supply for delivery of power to a load. The integrated circuit can include multiple connectivity ports, on-board memory, and mode control logic. The multiple connectivity ports such as pins, pads, etc., of the integrated circuit can be configured to provide connections between internal circuitry residing in the integrated circuit and external circuitry residing on a circuit board to which the integrated circuit is attached. The mode control logic monitors a status of one or more connectivity ports of the integrated circuit to detect when a board handler places the digital controller in a power island mode in which the integrated circuit is powered so that the board handler can access (e.g., read/write) the memory in the digital controller integrated circuit while other portions of the board are unpowered.

Abstract: A method of forming an improved Schottky diode structure as part of an integrated circuit fabrication process that includes the introduction of a selectable concentration of dopant into the surface of an epitaxial layer so as to form a barrier-modifying surface dopant layer. The epitaxial layer forms the cathode of the Schottky diode and a metal-silicide layer on the surface of the epitaxial layer forms the diode junction. The surface dopant layer positioned between the cathode and the diode junction is designed to raise or lower the barrier height between those two regions either to reduce the threshold turn-on potential of the diode, or to reduce the reverse leakage current of the transistor. The particular dopant conductivity used to form the surface dopant layer is dependent upon the conductivity of the epitaxial layer and the type of metal used to form the metal-silicide junction.

Abstract: A method of forming an intermediate semiconductor structure as part of a BiCMOS process to provide for improved anti-punch-through (APT) protection and improved threshold-voltage (Vt) adjustment for the MOS devices of the structure. The method includes the fabrication of a split polysilicon layer and the introduction of APT and Vt related carriers after formation of the gate oxide layer. The intermediate structure includes the gate oxide layer and a protective amorphous silicon layer formed on the surface of the gate oxide layer in an in situ process. The protective amorphous structure is formed to protect the integrity of the gate oxide layer during subsequent acid washes associated with the BiCMOS process. The amorphous layer may be deposited in a thickness substantially less than that associated with prior spilt polycrystalline silicon processes. This allows for introduction of the APT and Vt related carriers using relatively standard implanting equipment.