Patents by Inventor Ronald J. Kuse

Ronald J. Kuse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9761800
    Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: September 12, 2017
    Assignee: Intermolecular, Inc.
    Inventors: Prashant B. Phatak, Ronald J. Kuse, Jinhong Tong
  • Patent number: 9178147
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: November 3, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Patent number: 9178146
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: November 3, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Publication number: 20150155486
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Application
    Filed: February 11, 2015
    Publication date: June 4, 2015
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Patent number: 9012881
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: April 21, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Publication number: 20140302659
    Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
    Type: Application
    Filed: June 23, 2014
    Publication date: October 9, 2014
    Inventors: Prashant B. Phatak, Ronald J. Kuse, Jinhong Tong
  • Patent number: 8822265
    Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: September 2, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Prashant B Phatak, Ronald J. Kuse, Jinhong Tong
  • Publication number: 20140225056
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Application
    Filed: April 17, 2014
    Publication date: August 14, 2014
    Applicant: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Patent number: 8723156
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: May 13, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Publication number: 20130341584
    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 26, 2013
    Applicant: Intermolecular, Inc.
    Inventors: Ronald J. Kuse, Tony P. Chiang, Imran Hashim
  • Patent number: 7368020
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Grant
    Filed: April 5, 2004
    Date of Patent: May 6, 2008
    Assignee: Intel Corporation
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Patent number: 7256872
    Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: August 14, 2007
    Assignee: Intel Corporation
    Inventors: Han-Ming Wu, Ronald J. Kuse
  • Publication number: 20040191649
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Application
    Filed: April 5, 2004
    Publication date: September 30, 2004
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Publication number: 20040145716
    Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.
    Type: Application
    Filed: January 16, 2004
    Publication date: July 29, 2004
    Inventors: Han-Ming Wu, Ronald J. Kuse
  • Patent number: 6763608
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Grant
    Filed: September 26, 2002
    Date of Patent: July 20, 2004
    Assignee: Intel Corporation
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Patent number: 6732746
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: May 11, 2004
    Assignee: Intel Corporation
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Patent number: 6715495
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: April 6, 2004
    Assignee: Intel Corporation
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Patent number: 6710845
    Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the enclosure and removing the initial gas from the enclosure. Adding and removing may be accomplished by using pressure, diffusion, or vacuum.
    Type: Grant
    Filed: December 29, 2000
    Date of Patent: March 23, 2004
    Assignee: Intel Corporation
    Inventors: Han-Ming Wu, Ronald J. Kuse
  • Publication number: 20030035096
    Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
    Type: Application
    Filed: September 26, 2002
    Publication date: February 20, 2003
    Applicant: Intel Corporation
    Inventors: Giang T. Dao, Ronald J. Kuse
  • Publication number: 20020085183
    Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 4, 2002
    Inventors: Han-Ming Wu, Ronald J. Kuse