Patents by Inventor Ronald J. Line

Ronald J. Line has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated cobalt silicide process for semiconductor devices
    Patent number: 6793735
    Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.
    Type: Grant
    Filed: December 27, 2000
    Date of Patent: September 21, 2004
    Assignee: International Business Machines Corporation
    Inventors: Marc W. Cantell, Jerome B. Lasky, Ronald J. Line, William J. Murphy, Kirk D. Peterson, Prabhat Tiwari
  • Integrated cobalt silicide process for semiconductor devices
    Publication number: 20010001298
    Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.
    Type: Application
    Filed: December 27, 2000
    Publication date: May 17, 2001
    Applicant: International Business Machines Corporation
    Inventors: Marc W. Cantell, Jerome B. Lasky, Ronald J. Line, William J. Murphy, Kirk D. Peterson, Prabhat Tiwari
  • Integrated cobalt silicide process for semiconductor devices
    Patent number: 6184132
    Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.
    Type: Grant
    Filed: August 3, 1999
    Date of Patent: February 6, 2001
    Assignee: International Business Machines Corporation
    Inventors: Marc W. Cantell, Jerome B. Lasky, Ronald J. Line, William J. Murphy, Kirk D. Peterson, Prabhat Tiwari