Abstract: An advantageous optical apparatus with relatively large field viewing of an image to the rear of an observer is disclosed. The apparatus has two mirrors having cylindrical symmetry where the mirrors are positioned so that a plane of symmetry for each mirror is substantially coincident. The mirrors are further configured so that the apparatus has an astigmatism less than 0.0035, and a ratio between the far field and the near field magnification of less than 0.9. The apparatus is fabricated, in one embodiment, by using force to conform a thin polymer mirror onto an appropriate surface configuration on a monolithic block.

Abstract: An advantageous optical apparatus with relatively large field viewing of an image to the rear of an observer is disclosed. The apparatus has two mirrors having cylindrical symmetry where the mirrors are positioned so that a plane of symmetry for each mirror is substantially coincident. The mirrors are further configured so that the apparatus has an astigmatism less than 0.0035, and a ratio between the far field and the near field magnification of less than 0.9. The apparatus is fabricated, in one embodiment, by using force to conform a thin polymer mirror onto an appropriate surface configuration on a monolithic block.

Abstract: A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.

Abstract: A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.

Abstract: A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.

Abstract: A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the step of providing a semiconductor wafer including a dielectric layer formed on the wafer. The dielectric layer has vias formed therein. The wafer is placed in a deposition chamber wherein the wafer has a first temperature achieved without preheating. A metal is deposited on the wafer which fills the vias wherein the metal depositing is initiated at a substantially same time as heating the wafer from the first temperature.

Abstract: A method for enhancing the removal rate of a metal barrier layer during CMP includes providing a semiconductor wafer having an insulator layer, a metal barrier layer formed on at least a portion of the insulation layer and a conductive layer formed thereon and contacting the semiconductor wafer with a chemical-mechanical polishing slurry containing a metal removal-enhancing amount of at least one chelating agent.

Abstract: Integrated circuit fabrication includes the formation of tungsten contacts in windows. Between the tungsten and the contact region are Ti and TiN layers. Defects are prevented or reduced by sealing grain boundaries in the TiN layer prior to tungsten deposition. Grain boundaries are sealed by rinsing the TiN layer in water at ambient temperature or above.