Abstract: Low resistance or ohmic contacts to p and n-type conductivity semiconductor material sometimes requires a different metal for each contact. Intermixing of these metals is undesirable so that special measures are necessary to form such contacts in close proximity on a common semiconductor surface.Using gold alloy contact materials, a first gold alloy is deposited on the common surface and defined by photolithography to make the contact to material of one conductivity type. The common surface and first contact then are covered by successive layers of titanium and gold. The titanium-gold layer is selectively etched by photolithographic means to expose the material of opposite conductivity type. A second gold alloy layer then is deposited on the exposed surface, and patterned photolithographically using an etchant which removes the gold and gold alloys but does not attack titanium. Finally, the titanium protective layer is removed using a selective etchant which does not attack gold or gold alloys.