Abstract: A poled polymer structure is formed on the surface of a substrate by poling a nonlinear optical reactant during a plasma polymerizing deposition of the reactant onto the surface. The substrate is fixed between the positive plasma-generating and ground electrodes in an air-evacuated chamber so that the substrate electrically floats relative to the electrodes. This arrangement permits the application of an electrostatic poling field to the depositing polymer structure while the plasma excitation power is maintained. The electrostatic poling field is produced by the application of a dc voltage to poling electrodes that can be arranged in various configurations relative to the substrate.

Abstract: A capacitor is formed utilizing a plasma deposited capacitor dielectric wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a capacitor dielectric that can exhibit a low dielectric constant and, in selected depositions, a response to photo-oxidation induced by exposure to radiated electromagnetic energy in the presence of oxygen. Photo-oxidation of selected depositions can be used to alter the dielectric constant of the capacitor dielectric after the capacitor has been fabricated. The capacitor may be used in precision filter applications.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: An optical element, such as a waveguide, is formed by utilizing a plasma deposited precursor optical material wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a precursor optical material that can be selectively photo-oxidized by exposure to electromagnetic energy in the presence of oxygen to produce photo-oxidized regions that have a selectively lower index of refraction than that of the non-photo-oxidized regions whereby transmission of a light signal through selected non-photo-oxidized and photo-oxidized regions can be controlled. Subsequent photo-oxidation or variable photo-oxidation can be used to produce various discrete regions with different indexes of refraction for fabrication, optimization or repair of photonic structures.

Abstract: An optical element, such as a waveguide, is formed by utilizing a plasma deposited precursor optical material wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a precursor optical material that can be selectively photo-oxidized by exposure to electromagnetic energy in the presence of oxygen to produce photo-oxidized regions that have a selectively lower index of refraction than that of the non-photo-oxidized regions whereby transmission of a light signal through selected non-photo-oxidized and photo-oxidized regions can be controlled. Subsequent photo-oxidation or variable photo-oxidation can be used to produce various discrete regions with different indexes of refraction for fabrication, optimization or repair of photonic structures.

Abstract: A capacitor is formed utilizing a plasma deposited capacitor dielectric wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a capacitor dielectric that can exhibit a low dielectric constant and, in selected depositions, a response to photo-oxidation induced by exposure to radiated electromagnetic energy in the presence of oxygen. Photo-oxidation of selected depositions can be used to alter the dielectric constant of the capacitor dielectric after the capacitor has been fabricated. The capacitor may be used in precision filter applications.

Abstract: A poled polymer structure is formed on the surface of a substrate by poling a nonlinear optical reactant during a plasma polymerizing deposition of the reactant onto the surface. The substrate is fixed between the positive plasma-generating and ground electrodes in an air-evacuated chamber so that the substrate electrically floats relative to the electrodes. This arrangement permits the application of an electrostatic poling field to the depositing polymer structure while the plasma excitation power is maintained. The electrostatic poling field is produced by the application of a dc voltage to poling electrodes that can be arranged in various configurations relative to the substrate.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: A capacitor is formed utilizing a plasma deposited capacitor dielectric wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a capacitor dielectric that can exhibit a low dielectric constant and, in selected depositions, a response to photo-oxidation induced by exposure to radiated electromagnetic energy in the presence of oxygen. Photo-oxidation of selected depositions can be used to alter the dielectric constant of the capacitor dielectric after the capacitor has been fabricated. The capacitor may be used in precision filter applications.

Abstract: A poled polymer material is formed on the surface of a substrate by poling a nonlinear optical reactant during a plasma polymerizing deposition of the reactant onto the surface. The substrate is fixed between the positive plasma-generating and ground electrodes in an air-evacuated chamber so that the substrate electrically floats relative to the electrodes. This arrangement permits the application of an electrostatic poling field to the depositing polymer material while the plasma excitation power is maintained. The electrostatic poling field is produced by the application of a dc voltage to poling electrodes that can be arranged in various configurations relative to the substrate.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: A process for making a two-component plasma-deposited photo-oxidizable organosilicon film on a substrate from a silicon donor and an organic precursor. Subjecting selected areas of the film to photo-oxidation allows selective etching of the non-photo-oxidized or photo-oxidized areas of the film. The process is used as a resist for patterning substrates in the fabrication of solid-state devices. It is of particular use in patterning heat sensitive substrates and accomplishing microlithography in a closed chamber process at other than atmospheric pressure. The process allows photo-oxidation with ultraviolet light at wavelengths closer to visible light than that for conventional photoresists. The processed film exhibits selective wetting properties between the non-photo-oxidized and photo-oxidized areas of the film.

Abstract: An RF plasma deposition apparatus for depositing a film of material on substrates positioned in a vertical plane and electrically "floating" within the glow discharge. For deposition of silicon nitride films, the apparatus is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a "hot" RF electrode, within which a glow discharge is ignited. Elemental nitrogen may be delivered to the coating cavity after being dissociated in a local, separate RF plasma called an "atomizer" cavity. During coating, elemental nitrogen combines with elemental silicon and deposits silicon nitride upon the substrate surface.

Abstract: A process for coating an optical plastic substrate, for example polymethylmethacrylate (PPMA), with a single layer coating for the purpose of improving the durability of the plastic, the coating being deposited by a low temperature plasma polymerization process.