Abstract: A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.

Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Abstract: A composition comprises at least one a composition comprising at least one organosilicon compound which has two or more silicon atoms connected to either a carbon atom or a hydrocarbon moiety.

Abstract: In an active hydrogen-containing B-side composition for reaction with a polyisocyanate-containing A-side composition to make a polyurethane or polyurethaneurea elastomer by reaction injection molding, the improvement which comprises a mold release composition which is the reaction product of triethylenediamine and a C.sub.2 -C.sub.21 epoxide reacted in the presence of a carboxy functional siloxane.

Abstract: In an active hydrogen-containing B-side composition for reaction with a polyisocyanate-containing A-side composition to make a polyurethane or polyurethane/urea elastomer by reaction injected molding, the improvement which comprises a mold release composition which is the reaction product of a C.sub.12 -C.sub.36 fatty acid, a tertiary amine having at least one C.sub.12 -C.sub.18 alkyl substituent and a C.sub.2 -C.sub.21 reactive epoxide.

Abstract: High capacity solid state compositions comprising cyanocobaltate complexes have been developed which are capable of reversibly chemically binding oxygen to selectively remove oxygen from an oxygen-containing fluid stream. The cyanocobaltate complexes which make up the compositions comprise a cobalt (II)-containing anion having from 3 to 5 cyanide ligands wherein at least one cyanide stretching mode, as measured by infrared spectroscopy, is between 2074 cm.sup.-1 and 2140 cm.sup.-1. Additionally, these complexes have a charge-balancing cation having a molecular volume in excess of 40.ANG..sup.3.

Abstract: High Capacity solid state cyanocobaltate complexes represented by the chemical formula:[(A).sub.a (R.sub.4 N).sub.b ].sup.z+.sub.x/z [Co(CN).sub.n ].sup.x- .multidot.pSwhere:A is alkali metal atom, alkaline earth metal atom, Zn, Cd or Hg atom;a is any number from 0 to 2.5each R is independently C.sub.1 -C.sub.1O substituted or unsubstituted alkyl, aryl or aralkyl; or a long chain hydrocarbon polymerb is any number from greater than zero to 3z is 1, 2 or 3;n is any number from 3 to 5;x is n-2;p is any number from greater than zero to 6; andS is a ligand which is capable of coordinating with [(A).sub.a (R.sub.4 N).sub.b 9 .sup.z+, Co or both.are capable of chemically binding oxygen to form novel oxygen adducts, thereby selectively removing oxygen from an oxygen-containing fluid stream. The bound oxygen may be recovered from the complexes by increasing the temperature or by reducing the partial pressure of O.sub.2 above the adduct.

Abstract: A process is provided for selectively separating oxygen from an oxygen-containing fluid stream by bringing said fluid stream into contact with a high capacity solid state cyanocobaltate complex in a non-aluminosilicate environment represented by the chemical formula:A.sub.x/z.sup.z+ [Co(CN).sub.n ].sup.x- .multidot.pSwhere:A is an alkali, alkaline earth, transition, or Group 12 metal atom;z is 1, 2 or 3;n is any number from 3 to 5;x is n-2;p is any number from greater than zero to 6; andS is a ligand which is capable of coordinating with A.sup.z+, Co or both.These complexes chemically bind oxygen to form novel oxygen adducts, thereby selectively removing oxygen from the fluid stream. The bound oxygen may be recovered by increasing the temperature or by reducing the partial pressure of O.sub.2 above the adduct.

Abstract: A process is provided for selectively separating oxygen from an oxygen-containing fluid stream by bringing said fluid stream into contact with a high capacity solid state cyanocobaltate complex in a non-aluminosilicate environment represented by the chemical formula:A.sub.X/Z.sup.Z+ [Co(CN).sub.n ].sup.X- .cndot.pSwhere:A is an alkali, alkaline earth, transition, or Group 12 metal atom;Z is 1, 2 or 3;n is any number from 3 to 5;X is n-2;p is any number from greater than zero to 6; andS is a ligand which is capable of coordinating with A.sup.Z+, Co or both.These complexes chemically bind oxygen to form novel oxygen adducts, thereby selectively removing oxygen from the fluid stream. The bound oxygen may be recovered by increasing the temperature or by reducing the partial pressure of O.sub.2 above the adduct.